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arXiv · 1204.2312

Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function

Li Qiang Zhu·Guo Dong Wu·Hong Liang Zhang·Ju Mei Zhou·Qing Wan
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Abstract

A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized on such in-plane-gate device with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function was demonstrated on dual in-plane-gate device.

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Li Qiang Zhu, Guo Dong Wu, Hong Liang Zhang, Ju Mei Zhou, Qing Wan. 2012-04-11. Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function. https://arxiv.org/abs/1204.2312

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