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Qing Wan

Publications and source records attributed to Qing Wan.

18 recordsLinked to original sources

Improving the Transferability of Adversarial Attacks by an Input Transpose

Deep neural networks (DNNs) are highly susceptible to adversarial examples--subtle perturbations applied to inputs that are often imperceptible to humans yet lead to incorrect model predictions. In black-box scenarios, however, existing adversarial examples exhibit limited transferability and struggle to effectively compromise multiple unseen DNN models. Previous strategies enhance the cross-model generalization of adversarial examples by introducing versatility into adversarial perturbations, thereby improving transferability. However, further refining perturbation versatility often demands intricate algorithm development and substantial computation consumption. In this work, we propose an input transpose method that requires almost no additional labor and computation costs but can significantly improve the transferability of existing adversarial strategies. Even without adding adversarial perturbations, our method demonstrates considerable effectiveness in cross-model attacks. Our exploration finds that on specific datasets, a mere $1^\circ$ left or right rotation might be sufficient for most adversarial examples to deceive unseen models. Our further analysis suggests that this transferability improvement triggered by rotating only $1^\circ$ may stem from visible pattern shifts in the DNN's low-level feature maps. Moreover, this transferability exhibits optimal angles that, when identified under unrestricted query conditions, could potentially yield even greater performance.

cs.CV

Strongly Magnetically Tuned Coupling Strength and Nonlinearity in CrSBr Exciton-Polaritons

Two-dimensional van der Waals (vdW) magnetic semiconductors CrSBr offer an ideal platform to achieve exciton-polaritons correlated with magnetic orders for developing solid-state quantum, spintronic, and photonic devices. However, for the exciton-polaritons formed by lower-energy excitons (XL = 1.37 eV), the coupling strength and nonlinear optical response are almost inert to the external magnetic field. Here, we demonstrate robust strong coupling between higher-energy excitons (XH = 1.8 eV) and photons that persists up to room temperature, along with giant magnetic-field tunability. The Rabi splitting energy is tuned up to 100 meV within a moderate 0.45 T in-plane magnetic field due to changes in excitonic states during the spin transitions. Besides, we observe significantly enhanced polariton nonlinearity in the intermediate magnetic phase, which exhibits a distinct mode-number dependence and originates from magnon-assisted long-range attractive interactions and coupling strength reduction. These results advance the development of on-demand polariton platforms for spin-correlated quantum optoelectronics.

cond-mat.mtrl-sci

AdjointBackMapV2: Precise Reconstruction of Arbitrary CNN Unit's Activation via Adjoint Operators

Adjoint operators have been found to be effective in the exploration of CNN's inner workings [1]. However, the previous no-bias assumption restricted its generalization. We overcome the restriction via embedding input images into an extended normed space that includes bias in all CNN layers as part of the extended space and propose an adjoint-operator-based algorithm that maps high-level weights back to the extended input space for reconstructing an effective hypersurface. Such hypersurface can be computed for an arbitrary unit in the CNN, and we prove that this reconstructed hypersurface, when multiplied by the original input (through an inner product), will precisely replicate the output value of each unit. We show experimental results based on the CIFAR-10 and CIFAR-100 data sets where the proposed approach achieves near 0 activation value reconstruction error.

cs.LG

AdjointBackMap: Reconstructing Effective Decision Hypersurfaces from CNN Layers Using Adjoint Operators

There are several effective methods in explaining the inner workings of convolutional neural networks (CNNs). However, in general, finding the inverse of the function performed by CNNs as a whole is an ill-posed problem. In this paper, we propose a method based on adjoint operators to reconstruct, given an arbitrary unit in the CNN (except for the first convolutional layer), its effective hypersurface in the input space that replicates that unit's decision surface conditioned on a particular input image. Our results show that the hypersurface reconstructed this way, when multiplied by the original input image, would give nearly the exact output value of that unit. We find that the CNN unit's decision surface is largely conditioned on the input, and this may explain why adversarial inputs can effectively deceive CNNs.

cs.CV

Action Recognition and State Change Prediction in a Recipe Understanding Task Using a Lightweight Neural Network Model

Consider a natural language sentence describing a specific step in a food recipe. In such instructions, recognizing actions (such as press, bake, etc.) and the resulting changes in the state of the ingredients (shape molded, custard cooked, temperature hot, etc.) is a challenging task. One way to cope with this challenge is to explicitly model a simulator module that applies actions to entities and predicts the resulting outcome (Bosselut et al. 2018). However, such a model can be unnecessarily complex. In this paper, we propose a simplified neural network model that separates action recognition and state change prediction, while coupling the two through a novel loss function. This allows learning to indirectly influence each other. Our model, although simpler, achieves higher state change prediction performance (67% average accuracy for ours vs. 55% in (Bosselut et al. 2018)) and takes fewer samples to train (10K ours vs. 65K+ by (Bosselut et al. 2018)).

cs.CL

A light-stimulated neuromorphic device based on graphene hybrid phototransistor

Neuromorphic chip refers to an unconventional computing architecture that is modelled on biological brains. It is ideally suited for processing sensory data for intelligence computing, decision-making or context cognition. Despite rapid development, conventional artificial synapses exhibit poor connection flexibility and require separate data acquisition circuitry, resulting in limited functionalities and significant hardware redundancy. Here we report a novel light-stimulated artificial synapse based on a graphene-nanotube hybrid phototransistor that can directly convert optical stimuli into a "neural image" for further neuronal analysis. Our optically-driven synapses involve multiple steps of plasticity mechanisms and importantly exhibit flexible tuning of both short- and long-term plasticity. Furthermore, our neuromorphic phototransistor can take multiple pre-synaptic light stimuli via wavelength-division multiplexing and allows advanced optical processing through charge-trap-mediated optical coupling. The capability of complex neuromorphic functionalities in a simple silicon-compatible device paves the way for novel neuromorphic computing architectures involving photonics.

cs.ET

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

q-bio.NC

Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

Neuron is the most important building block in our brain, and information processing in individual neuron involves the transformation of input synaptic spike trains into an appropriate output spike train. Hardware implementation of neuron by individual ionic/electronic hybrid device is of great significance for enhancing our understanding of the brain and solving sensory processing and complex recognition tasks. Here, we provide a proof-of-principle artificial neuron based on a proton conducting graphene oxide (GO) coupled oxide-based electric-double-layer (EDL) transistor with multiple driving inputs and one modulatory input terminal. Paired-pulse facilitation, dendritic integration and orientation tuning were successfully emulated. Additionally, neuronal gain control (arithmetic) in the scheme of rate coding is also experimentally demonstrated. Our results provide a new-concept approach for building brain-inspired cognitive systems.

q-bio.NC

Dendritic Integration Regulation and Neuronal Arithmetic Implemented in a Proton-Coupled Neuron Transistor

Neuron is the most important building block in our brain, and information processing in individual neuron involves the transformation of input synaptic spike trains into an appropriate output spike train. Hardware implementation of neuron by individual ionic/electronic coupled device is of great importance for enhancing our understanding of the brain and solving sensory processing and complex recognition tasks. Here, we provide a proof-of-principle artificial neuron with multiple presynaptic inputs and one modulatory terminal based on a proton-coupled oxide-based electric-double-layer transistor. Regulation of dendritic integration was realized by tuning the voltage applied on the modulatory terminal. Additionally, neuronal gain control (arithmetic) in the scheme of temporal-correlated coding and rate coding are also mimicked. Our results provide a new-concept approach for building brain-inspired neuromorphic systems.

q-bio.NC

Flexible Sensory Platform Based on an Electrolyte-Gated Oxide Neuron Transistor

Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuron transistors gated by solid-state electrolyte films are fabricated on flexible plastic substrates for biochemical sensing applications. When a quasi-static dual-gate laterally synergic sensing mode is adopted, the neuron transistor sensor shows a high pH sensitivity of ~105 mV/pH, which is higher than the Nernst limit. Our results demonstrate that single-spike dynamic mode can remarkably improve the pH sensitivity, reduce response/recover time and power consumption. We also find that appropriate depression applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuron transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

cond-mat.mtrl-sci

Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems Applications

The basic units in our brain are neurons and each neuron has more than 1000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform critical computational functions in neural circuits. Therefore the major challenge for the hardware implementation of neuromorphic computation is to develop artificial synapse. Here, in-plane oxide-based artificial synapse network coupled by proton neurotransmitters are self-assembled on glass substrates at room-temperature. A strong lateral modulation is observed due to the proton migration in the nanogranular phosphorus-doped SiO2 electrolyte films. Functional roles of short-term plasticity, including paired-pulse facilitation, dynamic filtering and spatiotemporally correlated signal processing are mimicked. Such in-plane oxide-based protonic/electronic hybrid synapse network proposed here are interesting for building future neuromorphic systems.

cond-mat.mtrl-sci

Learning and Spatiotemporally Correlated Functions Mimicked in Oxide-Based Artificial Synaptic Transistors

Learning and logic are fundamental brain functions that make the individual to adapt to the environment, and such functions are established in human brain by modulating ionic fluxes in synapses. Nanoscale ionic/electronic devices with inherent synaptic functions are considered to be essential building blocks for artificial neural networks. Here, Multi-terminal IZO-based artificial synaptic transistors gated by fast proton-conducting phosphosilicate electrolytes are fabricated on glass substrates. Proton in the SiO2 electrolyte and IZO channel conductance are regarded as the neurotransmitter and synaptic weight, respectively. Spike-timing dependent plasticity, short-term memory and long-term memory were successfully mimicked in such protonic/electronic hybrid artificial synapses. And most importantly, spatiotemporally correlated logic functions are also mimicked in a simple artificial neural network without any intentional hard-wire connections due to the naturally proton-related coupling effect. The oxide-based protonic/electronic hybrid artificial synaptic transistors reported here are potential building blocks for artificial neural networks.

cond-mat.mtrl-sci

Artificial Synaptic Arrays Intercoupled by Nanogranular Proton Conductors for Building Neuromorphic Systems

The highly parallel process in the neuron networks is mediated through a mass of synaptic interconnections. Mimicking single synapse behaviors and highly paralleled neural networks has become more and more fascinating and important. Here, oxide-based artificial synaptic arrays are fabricated on P-doped nanogranular SiO2-based proton conducting films at room temperature. Synaptic plasticity is demonstrated on individual artificial synapse. Most importantly, without any intentional hard-wired connection, such synaptic arrays are intercoupled due to the electric-field induced lateral proton modulation. The natural interconnection is weakly correlative with distance, and is important for neural networks. At last, paralleled summation is also mimicked, which provides a novel approach for building future brain-like computational systems.

cond-mat.mtrl-sci

Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film Transistors with AND Logic Function

Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two in-plane control gates. The control gates, coupling with the floating gate, control the "on" and "off" of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.

cond-mat.mtrl-sci

Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

Surface anti-reflectance and passivation properties of the Al2O3 films deposited on crystalline Si substrates by atomic layer deposition are investigated. Textured Si with 100 nm Al2O3 shows a very low average reflectance of ~2.8 %. Both p-type and n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from ~10 μs before Al2O3 passivation to above 3 ms for both p-type and n-type Si after Al2O3 passivation layer deposition and annealing at an appropriate temperature. Our results indicate the dual functions of anti-reflectance and surface passivation in c-Si solar cell applications.

cond-mat.mtrl-sci

Junctionless dual-gate electrostatic modulation of self-aligned oxide channels by chitosan-based proton conductors

Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a self-aligned junctionless semiconducting oxide channels are dual-gate electrostatic modulated by solution-processed chitosan-based proton conductors on paper substrates. The low-voltage junctionless paper transistors can be effectively tuned from depletion mode to enhancement mode by the second in-plane gate. OR logic gate was experimentally demonstrated on such dual-in-plane gate junctionless transistors. Such dual-gate organic/inorganic hybrid paper transistors are promising for portable paper electronics.

cond-mat.mtrl-sci

Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function

A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized on such in-plane-gate device with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function was demonstrated on dual in-plane-gate device.

cond-mat.mtrl-sci

Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can lead to a new class of low-cost transistors.

cond-mat.mtrl-sci