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arXiv · 1204.2598

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

T. Plecenik·M. Tomasek·M. Belogolovskii·M. Truchly·M. Gregor·J. Noskovic·M. Zahoran·T. Roch·I. Boylo·M. Spankova·S. Chromik·P. Kus·A. Plecenik
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Abstract

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

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T. Plecenik, M. Tomasek, M. Belogolovskii, M. Truchly, M. Gregor, J. Noskovic, M. Zahoran, T. Roch, I. Boylo, M. Spankova, S. Chromik, P. Kus, A. Plecenik. 2012-04-12. Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites. https://doi.org/10.1063/1.3691598

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