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arXiv · 1206.1283

Tuning hole mobility in InP nanowires

M. Rebello Sousa Dias·A. Picinin·V. Lopez-Richard·S. E. Ulloa·L. K. Castelano·J. P. Rino·G. E. Marques
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Abstract

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.

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M. Rebello Sousa Dias, A. Picinin, V. Lopez-Richard, S. E. Ulloa, L. K. Castelano, J. P. Rino, G. E. Marques. 2012-06-06. Tuning hole mobility in InP nanowires. https://doi.org/10.1063/1.4764902

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