arXiv subjects

G. E. Marques

Publications and source records attributed to G. E. Marques.

At least 19 recordsLinked to original sources

arXiv2022

Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time.

cond-mat.mes-hall↗

arXiv2020

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for developing potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses.

cond-mat.mtrl-sci↗

arXiv2019

Topology driven g-factor tuning in type-II quantum dots

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.

cond-mat.mes-hall↗

arXiv2019

Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures

A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL.

cond-mat.mes-hall↗

arXiv2018

Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from high to low and the EL on-off ratio is enhanced by 2 orders of magnitude compared to the current on-off ratio. By combining the EL and current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current-voltage and the EL, we are able to tune the EL on-off ratio by up to 6 orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current on and off states. This electroluminescence, combined with the unique RTD properties such as the negative differential resistance (NDR) and high frequency operation, enables the development of high speed functional opto-electronic devices and optical switches.

cond-mat.mtrl-sci↗

arXiv2017

Electron-acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires

General expressions for the electron- and hole-acoustical-phonon deformation potential Hamiltonian (H_{E-DP}) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the short-range elastic continuum approach and on derived analytical results, the spatial confined effects on the vector phonon displacement, the phonon dispersion relation and the electron- and hole-phonon scattering amplitudes are analyzed. It is shown that the acoustical vector displacement, phonon frequencies and H_{E-DP} present mixed torsional, axial, and radial components depending on the angular momentum quantum number and phonon wavector under consideration. The treatment shows that bulk group velocities of the constituent materials are renormalized due to the spatial confinement and intrinsic strain at the interface. The role of insulating shell on the phonon dispersion and electron-phonon coupling in Ge/Si and Si/Ge NWs are discussed.

cond-mat.mes-hall↗

arXiv2016

Collective modes of trapped spinor Bose condensates

We study the richer structures of quasi-one-dimensional Bogoliubov-de Genes collective excitations of F = 1 spinor Bose-Einstein condensate in a harmonic trap potential loaded in an optical lattice. Employing a perturbative method we report general analytical expressions for the confined collective polar and ferromagnetic Goldstone modes. In both cases the excited eigenfrequencies are given as function of the 1D effective coupling constants, trap frequency and optical lattice parameters. It is shown that the main contribution of the optical lattice laser intensity is to shift the confined phonon frequencies. Moreover, for high intensities, the excitation spectrum becomes independent of the self-interaction parameters. We reveal some features of the evolution for the Goldstone modes as well as the condensate densities from the ferromagnetic to the polar phases.

cond-mat.quant-gas↗

arXiv2015

Damping of Confined Excitations Modes of 1D Condensates in an Optical Lattice

We study the damping of the collective excitations of Bose-Einstein condensates in a harmonic trap potential loaded in an optical lattice. In the presence of a confining potential the system is non-homogeneous and the collective excitations are characterized by a set of discrete confined phonon-like excitations. We derive a general convenient analytical description for the damping rate, which takes into account, the trapping potential and the optical lattice, for the Landau and Beliaev processes at any temperature, $T$. At high temperature or weak spatial confinement, we show that both mechanisms display linear dependence on $T$. In the quantum limit, we found that the Landau damping is exponentially suppressed at low temperatures and the total damping is independent of $T$. Our theoretical predictions for the damping rate under thermal regime is in completely correspondence with the experimental values reported for 1D condensate of sodium atoms. We show that the laser intensity can tune the collision process, allowing a \textit{resonant effect} for the condensate lifetime. Also, we study the influence of the attractive or repulsive non-linear terms on the decay rate of the collective excitations. A general expression of the renormalized Goldstone frequency has been obtained as a function of the 1D non-linear self-interaction parameter, laser intensity and temperature.

cond-mat.quant-gas↗

arXiv2015

Berry phase and Rashba fields in quantum rings in tilted magnetic field

We study the role of different orientations of an applied magnetic field as well as the interplay of structural asymmetries on the characteristics of eigenstates in a quantum ring system. We use a nearly analytical model description of the quantum ring, which allows for a thorough study of elliptical deformations and their influence on the spin content and Berry phase of different quantum states. The diamagnetic shift and Zeeman interaction compete with the Rashba spin-orbit interaction, induced by confinement asymmetries and external electric fields, to change spin textures of the different states. Smooth variations in the Berry phase are observed for symmetric quantum rings as function of applied magnetic fields. Interestingly, we find that asymmetries induce nontrivial Berry phases, suggesting that defects in realistic structures would facilitate the observation of geometric phases.

cond-mat.mes-hall↗

arXiv2015

Exploring the transport properties of polytypic and twin-plane nanowires: from tunneling phase-time to spin-orbit interaction effects

The variety of nanowire crystal structures gave rise to unique and novel transport phenomena. In particular, we have explored the superlattice profile generated by strain field modulation in twinplane nanowires for the tuning of transport channels and the built-in spin-orbit potential profile of polytypic nanowires, in order to realize a spin filter. The Multicomponent Scattering Approach has been used in terms of the Transfer Matrix Method to describe the phase-time of charge carriers. This system showed advantages for attaining conditions for the propagation of wave packets with negative group velocity. Moreover, the spin transport effect of a potential profile with volumetric spin-orbit bulk inversion asymmetry, as present on polytypic nanowires, was described through the Reverse Runge-Kutta Method. Using the peculiar symmetry of the excited states we have characterized a dominant spin dependence on structural parameters that results in effective spin filtering.

cond-mat.mes-hall↗

arXiv2014

Electron-phonon deformation potential interaction in core-shell Ge-Si and Si-Ge nanowires

We settle a general expression for the Hamiltonian of the electron-phonon deformation potential (DP) interaction in the case of non-polar core-shell cylindrical nanowires (NWs). On the basis of long range phenomenological continuum model for the optical modes and by taking into account the bulk phonon dispersions, we study the size dependence and strain-induced shift of the electron-phonon coupling strengths for Ge-Si and Si-Ge NWs. We derive analytically the DP electron-phonon Hamiltonian and report some numerical results for the frequency core modes and vibrational amplitudes. Our approach allows for the unambiguous identification of the strain and confinement effects. We explore the dependence of mode frequencies and hole-DP scattering rates on the structural parameters of these core-shell structures, which constitute a basic tool for the characterization and device applications of these novel nanosystems.

cond-mat.mes-hall↗

arXiv2013

Spin filtering in nanowire directional coupler

The spin transport characteristics of a nanowire directional electronic coupler have been evaluated theoretically via a transfer matrix approach. The application of a gate field in the region of mixing allows for control of spin current through the different leads of the coupler via the Rashba spin-orbit interaction. The combination of spin-orbit interaction and applied gate voltages on different legs of the coupler give rise to a controllable modulation of the spin polarization. Both structural factors and field strength tuning lead to a rich phenomenology that could be exploited in spintronic devices.

cond-mat.mes-hall↗

arXiv2012

Tuning hole mobility in InP nanowires

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.

cond-mat.mtrl-sci↗

arXiv2009

Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields

We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric fields.

cond-mat.mes-hall↗

arXiv2008

Phonon modulation of the spin-orbit interaction as a spin relaxation mechanism in InSb quantum dots

We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. By studying suitable choices of magnetic field and lateral dot size, we determine regions where the spin relaxation rates can be practically suppressed. We analyze the behavior of the spin relaxation rates as a function of an external magnetic field and mean quantum dot radius. Effects of the spin admixture due to Dresselhaus contribution to spin-orbit interaction are also discussed.

cond-mat.mes-hall↗

arXiv2008

Phonon modulation of the spin-orbit interaction as a spin relaxation mechanism in quantum dots

cond-mat.mes-hall↗

arXiv2007

Spin Effect on the Resonant Tunneling Characteristics of a Double-Barrier Heterostructures Under Longitudinal Stresses

Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention. Nevertheless nowadays there has been an increment in the number of electron spin-related experiments showing unique possibilities for finding novel mechanisms of information processing and transmission, opening ample fields of opportunities in the theoretical developed of new models. In this spirit we have calculated the resonant tunneling characteristics curves in double-barrier heterostructures of GaAs-Ga1-x AlxAs under external stress and considering two charges with spin half. The resonant tunneling study has been carried out by means of the diagrammatic techniques for non equilibrium processes following the model proposed by Keldysh also a simple one-band tight-binding Hamiltonian is adopted in the theoretical framework. We have compared our results of the spin-tunneling with previous ones reported in literature.

cond-mat.mes-hall↗

arXiv2007

Optical Transitions in New Trends Organic Materials

The PTCDA (3,4,9,10-Perylene-tetracarboxylic dianhydride) and the NTCDA (1,4,5,8-Naphtalenetetracarboxylic dianhydride) are aromatic, stable, planar and highly symmetric with unusual electrical properties. The PTCDA is a semiconductor organic crystalline of particular interest due to its excellent properties and electronic potential that are used in optoelectronic devices and the NTCDA it is monoclinic and its space group is similar to that of the PTCDA. Recently, alternate layers of PTCDA and NTCDA were growth forming multiple structures of quantum wells showing a new class of materials with new optic lineal properties. Some have assured that their big utilities would be centered in the construction of diodes and of possible guides of waves. We have carried out calculations semi-empirical of the electronic structures and of optic properties of the PTCDA and of the NTCDA that show us that they are structures highly orderly polymeric, semiconductors in a negative load state (charge state= -2)

cond-mat.other↗