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arXiv · 1206.2525

Macro- and micro-strain in GaN nanowires on Si(111)

Bernd Jenichen·Oliver Brandt·Carsten Pfueller·Pinar Dogan·Mathias Knelangen·Achim Trampert
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Abstract

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra.

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Bernd Jenichen, Oliver Brandt, Carsten Pfueller, Pinar Dogan, Mathias Knelangen, Achim Trampert. 2012-06-12. Macro- and micro-strain in GaN nanowires on Si(111). https://doi.org/10.1088/0957-4484%2F22%2F29%2F295714

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