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arXiv · 1207.2784

Engineering shallow spins in diamond with nitrogen delta-doping

Kenichi Ohno·F. Joseph Heremans·Lee C. Bassett·Bryan A. Myers·David M. Toyli·Ania C. Bleszynski Jayich·Christopher J. Palmstrom·David D. Awschalom
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Abstract

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \mus at d \geq 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.

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Kenichi Ohno, F. Joseph Heremans, Lee C. Bassett, Bryan A. Myers, David M. Toyli, Ania C. Bleszynski Jayich, Christopher J. Palmstrom, David D. Awschalom. 2012-07-11. Engineering shallow spins in diamond with nitrogen delta-doping. https://doi.org/10.1063/1.4748280

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