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arXiv · 1207.6317

Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk

Christopher V. Griffith·Stephen D. Bongiorno·David N. Burrows·Abraham D. Falcone·Zachary R. Prieskorn
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Abstract

We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36{\mu}m pixel size, and the readout array has a pitch of 18{\mu}m; but only one readout circuit line is bonded to each 36x36{\mu}m absorber pixel. This unique bonding structure gives the readout an effective pitch of 36{\mu}m. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS detector reported by Bongiorno et al. 2010 and Kenter et al. 2005.

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Christopher V. Griffith, Stephen D. Bongiorno, David N. Burrows, Abraham D. Falcone, Zachary R. Prieskorn. 2012-07-26. Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk. https://doi.org/10.1117/12.925732

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