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arXiv · 1208.1835

Disorder-free sputtering method on graphene

Xue Peng Qiu·Young Jun Shin·Jing Niu·Narayanapillai Kulothungasagaran·Gopinadhan Kalon·Caiyu Qiu·Ting Yu·Hyunsoo Yang
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Abstract

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

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Xue Peng Qiu, Young Jun Shin, Jing Niu, Narayanapillai Kulothungasagaran, Gopinadhan Kalon, Caiyu Qiu, Ting Yu, Hyunsoo Yang. 2012-08-09. Disorder-free sputtering method on graphene. https://arxiv.org/abs/1208.1835

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