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arXiv · 1209.1970

Strain tuning of topological band order in cubic semiconductors

Wanxiang Feng·Wenguang Zhu·Hanno H. Weitering·G. Malcolm Stocks·Yugui Yao·Di Xiao
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Abstract

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

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Wanxiang Feng, Wenguang Zhu, Hanno H. Weitering, G. Malcolm Stocks, Yugui Yao, Di Xiao. 2012-09-10. Strain tuning of topological band order in cubic semiconductors. https://doi.org/10.1103/physrevb.85.195114

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