arXiv subjects

Hanno H. Weitering

Publications and source records attributed to Hanno H. Weitering.

14 recordsLinked to original sources

arXiv2025

Enhanced superconductivity in ultrathin FeSe films on SrTiO3 via resonant anti-shielding: Superconductivity meets superfluidity

A vanishingly small dielectric function reflects a singular polarization response in a medium, leading to collective plasmonic or polaronic excitations that can enhance Cooper pairing in superconductors via a resonant anti-shielding (RAS) effect. Here, we show that RAS can explain the dramatic enhancement of superconductivity-relative to bulk FeSe, observed in single-unit-cell FeSe films on SrTiO$_3$ (STO) and related substrates. Moreover, we present evidence that RAS may play a central role in driving the Cooper pair condensate into a bipolaronic superfluid state. This interpretation aligns with a recent quantum Monte Carlo simulation by Zhang, et al. [Phys. Rev. X 13, 011010 (2023)], which indicated enhanced bipolaronic superconductivity in two-dimensional systems with moderately strong electron-phonon coupling. RAS may therefore represent a promising strategy for engineering high-T$_c$ superconducting heterostructures.

cond-mat.supr-con↗

arXiv2025

Microscopic Fingerprint of Chiral Superconductivity

Chiral superconductors have long been theorized to break time-reversal symmetry and support exotic topological features such as Majorana modes and spontaneous edge currents, promising ingredients for quantum technologies. Although several unconventional superconductors may exhibit time-reversal symmetry breaking, clear microscopic evidence of chiral pairing has remained out of reach. In this work, we demonstrate direct real-space signatures of chiral superconductivity in a single atomic layer of tin on Si(111). Using quasiparticle interference imaging, we detected symmetry-locked nodal and antinodal points in the Bogoliubov quasiparticle wavefunction, tightly bound to atomic point defects in the tin lattice. These nodal features, along with their surrounding texture, form a distinct real-space pattern exhibiting a clear and exclusive hallmark of chiral superconductivity. Our findings, reinforced by analytical theory and numerical simulations, offer unambiguous evidence of chiral pairing in a two-dimensional material.

cond-mat.supr-con↗

arXiv2023

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

cond-mat.mes-hall↗

arXiv2020

Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface

Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation-doped and metallized using heavily-doped p-type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped p-type Si(111) wafer is superconducting with a critical temperature of 4.7 +- 0.3 K. While a phonon-mediated coupling scenario would be consistent with the observed TC, Mott correlations in the Sn-derived dangling-bond surface state could suppress the s-wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.

cond-mat.supr-con↗

arXiv2019

Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions

Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario involving unbinding of topological defects at two distinct temperatures. Here we report on a novel melting transition of a charge-ordered K-Sn alloy monolayer on a silicon substrate. Melting starts with short-range positional fluctuations in the K sublattice while maintaining long-range order, followed by longer-range K diffusion over small domains, and ultimately resulting in a molten sublattice. Concomitantly, the charge-order of the Sn host lattice collapses in a multi-step process with both displacive and order-disorder transition characteristics. Our combined experimental and theoretical analysis provides a rare insight into the atomistic processes of a multi-step melting transition of a two-dimensional materials system.

cond-mat.mes-hall↗

arXiv2018

Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces

The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Tornevik et al. [C. Tornevik et al., Phys. Rev. B 44, 13144 (1991)] with a total Sn coverage of 14/12 monolayers (ML). The other is the 'revised trimer model' with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation as well as the critical role of valence band holes in this process. Similar processes may occur at other metal/semiconductor interfaces, provided they are non-metallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

cond-mat.mes-hall↗

arXiv2017

Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface

Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkably similar to those of the high-Tc copper oxide compounds. In this work, we show that the maximum hole-density of this system increases with decreasing domain size as the area of the Mott insulating domains approaches the nanoscale regime. Concomitantly, scanning tunneling spectroscopy data at 4.4 K reveal an increasingly prominent zero bias anomaly (ZBA). We consider two different scenarios as potential mechanisms for this ZBA: chiral d_(x^2 -y^2 )+ id_xy wave superconductivity and a dynamical Coulomb blockade (DCB) effect. The latter arises due to the formation of a resistive depletion layer between the nano-domains and the substrate. Both models fit the tunneling spectra with weaker ZBAs, while the DCB model clearly fits better to spectra recorded at higher temperatures or from the smallest domains with the strongest ZBA. Consistently, STS spectra from the lightly-doped substrates display oscillatory behavior that can be attributed to conventional Coulomb staircase behavior, which becomes stronger for smaller sized domains. We conclude that the ZBA is predominantly due to a DCB effect, while a superconducting instability is absent or a minor contributing factor.

cond-mat.mes-hall↗

arXiv2017

Realization of a hole-doped Mott insulator on a triangular silicon lattice

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with similar richness of physical phenomena, but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. Adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half-filled dangling bond orbitals. Modulation hole-doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasi-particle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

cond-mat.mes-hall↗

arXiv2016

Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth

The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatment in air. We tentatively ascribe this result to the decrease in surface energy associated with the surface reconstruction, which removes the driving force for faceting. Despite the narrow temperature window where this morphology can initially be formed, we demonstrate that it persists in homoepitaxial growth of TiO2(001) thin films. The stabilization of surface reconstructions that prevent faceting of high-surface-energy crystal faces may offer a promising avenue towards the realization of a wider range of high quality epitaxial transition metal oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2015

Surface Chemical Reactivity of Ultrathin Pd(111) Films on Ru(0001): Importance of Orbital Symmetry in the Application of the d-Band Model

The chemical bonding of adsorbate molecules on transition-metal surfaces is strongly influenced by the hybridization between the molecular orbitals and the metal d-band. The strength of this interaction is often correlated with the location of the metal d-band center relative to the Fermi level. Here, we exploit finite size effects in the electronic structure of ultrathin Pd(111) films grown on Ru(0001) to tune their reactivity by changing the film thickness one atom layer at a time, while keeping all other variables unchanged. Interestingly, while bulk Pd(111) is reactive towards oxygen, Pd(111) films below five monolayers are surprisingly inert. This observation is fully in line with the d-band model prediction when applied to the orbitals involved in the bonding. The shift of the d-band center with film thickness is primarily attributed to shifts in the partial density of states associated with the 4dxz and 4dyz orbitals. This study gives an in-depth look into the orbital specific contributions to the surface chemical reactivity, providing new insights that could be useful in surface catalysis.

cond-mat.mtrl-sci↗

arXiv2012

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

cond-mat.mtrl-sci↗

arXiv2006

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K, but also at finite temperatures, up to about ~ 240 K (0.8 T$_C$})

cond-mat.mes-hall↗

arXiv2006

Hard Superconductivity of a Soft Metal in the Quantum Regime

Superconductivity is inevitably suppressed in reduced dimensionality. Questions of how thin superconducting wires or films can be before they lose their superconducting properties have important technological ramifications and go to the heart of understanding coherence and robustness of the superconducting state in quantum-confined geometries. Here, we exploit quantum confinement of itinerant electrons in a soft metal to stabilize superconductors with lateral dimensions of the order of a few millimeters and vertical dimensions of only a few atomic layers. These extremely thin superconductors show no indication of defect- or fluctuation-driven suppression of superconductivity and sustain supercurrents of up to 10% of the depairing current density. The extreme hardness of the critical state is attributed to quantum trapping of vortices. This study paints a conceptually appealing, elegant picture of a model nanoscale superconductor with calculable critical state properties. It indicates the intriguing possibility of exploiting robust superconductivity at the nanoscale.

cond-mat.supr-con↗

arXiv1998

Theory of the "honeycomb chain-channel" reconstruction of Si(111)3x1

First-principles electronic-structure methods are used to study a structural model for Ag/Si(111)3x1 recently proposed on the basis of transmission electron diffraction data. The fully relaxed geometry for this model is far more energetically favorable than any previously proposed, partly due to the unusual formation of a Si double bond in the surface layer. The calculated electronic properties of this model are in complete agreement with data from angle-resolved photoemission and scanning tunneling microscopy.

cond-mat.mtrl-sci↗