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arXiv · 1211.3807

Universal scaling of resistivity in bilayer graphene

Kalon Gopinadhan·Young Jun Shin·Hyunsoo Yang
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Abstract

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.

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Kalon Gopinadhan, Young Jun Shin, Hyunsoo Yang. 2012-11-16. Universal scaling of resistivity in bilayer graphene. https://doi.org/10.1063/1.4769042

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