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arXiv · 1211.6591

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Rui Zhang·Yunliang Dong·Wenjie Kong·Wenpeng Han·Pingheng Tan·Zhimin Liao·Xiaosong Wu·Dapeng Yu
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Abstract

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.

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Rui Zhang, Yunliang Dong, Wenjie Kong, Wenpeng Han, Pingheng Tan, Zhimin Liao, Xiaosong Wu, Dapeng Yu. 2012-11-28. Growth of Large Domain Epitaxial Graphene on the C-Face of SiC. https://doi.org/10.1063/1.4765666

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