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arXiv · 1301.1319

Thermoelectric propertie of Ge based electron crystal phonon glass materials

Dimitri Tainoff·André Barski·Eric Prestat·Daniel Bourgault·Emmanuell Hadji·Yanqing Liu·Pascale Bayle-Guillemaud·Olivier Bourgeois
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Abstract

We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge:Mn layers along with a thorough structural characterization of this materials at the nanoscale. The room temperature thermoelectric properties of these layers containing spherical inclusions are discussed regarding their potential as a model of "electron crystal phonon glass material". We show that the thermal conductivity can be decreased by a factor of 30, even if the electronic properties can be conserved as in the bulk. The thermoelectric performance ZT of such material is as high as 0.15 making them a promising thermoelectric p-type material for Ge related application.

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Dimitri Tainoff, André Barski, Eric Prestat, Daniel Bourgault, Emmanuell Hadji, Yanqing Liu, Pascale Bayle-Guillemaud, Olivier Bourgeois. 2013-01-07. Thermoelectric propertie of Ge based electron crystal phonon glass materials. https://arxiv.org/abs/1301.1319

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