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arXiv · 1301.2813

Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$

N. R. Pradhan·D. Rhodes·Q. Zhang·S. Talapatra·M. Terrones·P. M. Ajayan·L. Balicas
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Abstract

By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $\mu$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.

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N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. M. Ajayan, L. Balicas. 2013-01-13. Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$. https://doi.org/10.1063/1.4799172

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