arXiv subjects

N. R. Pradhan

Publications and source records attributed to N. R. Pradhan.

3 recordsLinked to original sources

arXiv2015

Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field

Here, we present a detailed study on the temperature and angular dependence of the Shubnikov-de-Haas (SdH) effect in the semi-metal WTe$_2$. This compound was recently shown to display a very large non-saturating magnetoresistance which was attributed to nearly perfectly compensated densities of electrons and holes. We observe four fundamental SdH frequencies and attribute them to spin-orbit split, electron- and hole-like, Fermi surface (FS) cross-sectional areas. Their angular dependence seems consistent with ellipsoidal FSs with volumes suggesting a modest excess in the density of electrons with respect to that of the holes. We show that density functional theory (DFT) calculations fail to correctly describe the FSs of WTe$_2$. When their cross-sectional areas are adjusted to reflect the experimental data, the resulting volumes of the electron/hole FSs obtained from the DFT calculations would imply a pronounced imbalance between the densities of electrons and holes. We find evidence for field-dependent Fermi surface cross-sectional areas by fitting the oscillatory component superimposed onto the magnetoresistivity signal to several Lifshitz-Kosevich components. We also observe a pronounced field-induced renormalization of the effective masses. Taken together, our observations suggest that the electronic structure of WTe$_2$ evolves with the magnetic field. This evolution might be a factor contributing to its pronounced magnetoresistivity.

cond-mat.mtrl-sci↗

arXiv2015

Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.

cond-mat.mes-hall↗

arXiv2013

Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$

By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $μ$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.

cond-mat.mes-hall↗