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arXiv · 1301.4527

Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors

Wan Sik Hwang·Maja Remskar·Rusen Yan·Tom Kosel·Jong Kyung Park·Byung Jin Cho·Wilfried Haensch·Huili·Xing·Alan Seabaugh·Debdeep Jena
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Abstract

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.

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Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin Cho, Wilfried Haensch, Huili, Xing, Alan Seabaugh, Debdeep Jena. 2013-01-19. Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors. https://doi.org/10.1063/1.4789975

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