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arXiv · 1301.5353

Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3

N. Haldolaarachchige·W. A. Phelan·Y. M. Xiong·R. Jin·J. Y. Chan·S. Stadler·D. P. Young
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Abstract

Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 {\mu}V/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity ({\kappa}(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 {\mu}V/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.

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N. Haldolaarachchige, W. A. Phelan, Y. M. Xiong, R. Jin, J. Y. Chan, S. Stadler, D. P. Young. 2013-01-22. Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3. https://doi.org/10.1063/1.4793493

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