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J. Y. Chan

Publications and source records attributed to J. Y. Chan.

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Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs

We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $Θ_H$ at higher fields, that is $Θ_H \sim 82.5^{\circ}$, implying a very pronounced Hall signal superimposed into its magnetoresistivity. For magnetic fields and electrical currents perpendicular to the \emph{c}-axis we observe a very pronounced planar Hall-effect, when the magnetic field is rotated within the basal plane. This effect is observed even at higher temperatures, i.e. as high as $T = 100$ K, and predicted recently to result from the chiral anomaly among Weyl points. Superimposed onto this planar Hall, which is an even function of the field, we observe an anomalous planar Hall-signal akin to the one reported for that is an odd function of the field. Below 100 K, negative longitudinal magnetoresistivity (LMR), initially ascribed to the chiral anomaly and subsequently to current inhomogeneities, is observed in samples having different geometries and contact configurations, once the large Hall signal is subtracted. Our measurements reveal a phase transition upon approaching the quantum limit that leads to the reconstruction of the FS and to the concomitant suppression of the negative LMR indicating that it is intrinsically associated with the Weyl dispersion at the Fermi level. For fields along the \emph{a}-axis it also leads to a pronounced hysteresis pointing to a field-induced electronic phase-transition. This collection of unconventional tranport observations points to the prominent role played by the axial anomaly among Weyl nodes.

cond-mat.mes-hall

Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2

We present a detailed quantum oscillatory study on the Dirac type-II semimetallic candidates PdTe$_{2}$ and PtTe$_{2}$ \emph{via} the temperature and the angular dependence of the de Haas-van Alphen (dHvA) and Shubnikov-de Haas (SdH) effects. In high quality single crystals of both compounds, i.e. displaying carrier mobilities between $10^3$ and $10^4$ cm$^2$/Vs, we observed a large non-saturating magnetoresistivity (MR) which in PtTe$_2$ at a temperature $T = 1.3$ K, leads to an increase in the resistivity up to $5 \times 10^{4}$ % under a magnetic field $μ_0 H = 62$ T. These high mobilities correlate with their light effective masses in the range of 0.04 to 1 bare electron mass according to our measurements. For PdTe$_{2}$ the experimentally determined Fermi surface cross-sectional areas show an excellent agreement with those resulting from band-structure calculations. Surprisingly, this is not the case for PtTe$_{2}$ whose agreement between calculations and experiments is relatively poor even when electronic correlations are included in the calculations. Therefore, our study provides a strong support for the existence of a Dirac type-II node in PdTe$_2$ and probably also for PtTe$_2$. Band structure calculations indicate that the topologically non-trivial bands of PtTe$_2$ do not cross the Fermi-level ($\varepsilon_F$). In contrast, for PdTe$_2$ the Dirac type-II cone does intersect $\varepsilon_F$, although our calculations also indicate that the associated cyclotron orbit on the Fermi surface is located in a distinct $k_z$ plane with respect to the one of the Dirac type-II node. Therefore it should yield a trivial Berry-phase.

cond-mat.str-el

Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2

The electronic structure of WTe$_2$ and orthorhombic $γ-$MoTe$_2$, are claimed to contain pairs of Weyl type-II points. A series of ARPES experiments claim a broad agreement with these predictions. We synthesized single-crystals of MoTe$_2$ through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) \emph{via} quantum oscillatory phenomena. We find that the superconducting transition temperature of $γ-$MoTe$_2$ depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe$_2$, the magnetoresistivity of $γ-$MoTe$_2$ does not saturate at high magnetic fields and can easily surpass $10^{6}$ \%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque, indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman-effect precluding the extraction of the Berry-phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level $\varepsilon_F$. Here, we show that a shift of the DFT valence bands relative to $\varepsilon_F$, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron- and hole-bands eliminates their crossings and, therefore, the Weyl type-II points predicted for $γ-$MoTe$_2$.

cond-mat.mes-hall

Fermi surface of the Weyl type-II metallic candidate WP2

Weyl type-II fermions are massless quasiparticles that obey the Weyl equation and which are predicted to occur at the boundary between electron- and hole-pockets in certain semi-metals, i.e. the (W,Mo)(Te,P)$_2$ compounds. Here, we present a study of the Fermi-surface of WP$_2$ \emph{via} the Shubnikov-de Haas (SdH) effect. Compared to other semi-metals WP$_2$ exhibits a very low residual resistivity, i.e. $ρ_0 \simeq 10$ n$Ω$cm, which leads to perhaps the largest non-saturating magneto-resistivity $(ρ(H))$ reported for any compound. For the samples displaying the smallest $ρ_0$, $ρ(H)$ is observed to increase by a factor of $2.5 \times 10^{7}$ $\%$ under $μ_{0}H = 35$ T at $T = 0.35$ K. The angular dependence of the SdH frequencies is found to be in very good agreement with the first-principle calculations when the electron- and hole-bands are slightly shifted with respect to the Fermi level, thus supporting the existence of underlying Weyl type-II points in WP$_2$.

cond-mat.mes-hall

Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3

Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 μV/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.

cond-mat.mtrl-sci

Anisotropic superconductivity in layered LaSb$_2$: the role of phase fluctuations

We present magnetic susceptibility and electrical transport measurements of the highly anisotropic compound LaSb$_2$ observing a very broad transition into a clean, consistent with type-I, superconducting state with distinct features of 2 dimensionality. Application of hydrostatic pressure induces a 2- to 3-dimensional crossover evidenced by a reduced anisotropy and transition width. The superconducting transition appears phase fluctuation limited at ambient pressure with fluctuations observed for temperatures greater than 8 times the superconducting critical temperature.

cond-mat.supr-con

Optical conductivity and superconductivity in LaSb$_2$

We have measured the resistivity, optical conductivity, and magnetic susceptibility of LaSb$_2$ to search for clues as to the cause of the extraordinarily large linear magnetoresistance and to explore the properties of the superconducting state. We find no evidence in the optical conductivity for the formation of a charge density wave state above 20 K despite the highly layered crystal structure. In addition, only small changes to the optical reflectivity with magnetic field are observed indicating that the MR is due to scattering rate, not charge density, variations with field. Although a superconducting ground state was previously reported below a critical temperature of 0.4 K, we observe, at ambient pressure, a fragile superconducting transition with an onset at 2.5 K. In crystalline samples, we find a high degree of variability with a minority of samples displaying a full Meissner fraction below 0.2 K and fluctuations apparent up to 2.5 K. The application of pressure stabilizes the superconducting transition and reduces the anisotropy of the superconducting phase.

cond-mat.str-el

Fermi surface evolution through a heavy fermion superconductor-to-antiferromagnet transition: de Haas-van Alphen effect in Cd-substituted CeCoIn$_5$

We report the results of de-Haas-van-Alphen (dHvA) measurements in Cd doped CeCoIn$_5$ and LaCoIn$_5$. Cd doping is known to induce an antiferromagnetic order in the heavy fermion superconductor CeCoIn$_5$, whose effect can be reversed with applied pressure. We find a slight but systematic change of the dHvA frequencies with Cd doping in both compounds, reflecting the chemical potential shift due to the addition of holes. The frequencies and effective masses are close to those found in the nominally pure compounds with similar changes apparent in the Ce and La compounds with Cd substitution. We observe no abrupt changes to the Fermi surface in the high field paramagnetic state for $x \sim x_c$ corresponding to the onset of antiferromagnetic ordering at H=0 in CeCo(In$_{1-x}$Cd$_x$)$_5$. Our results rule out $f-$electron localization as the mechanism for the tuning of the ground state in CeCoIn$_5$ with Cd doping.

cond-mat.str-el

Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite

The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge carriers with a density of only 10 to 30% of the Co density of our crystals. Despite the previous identification of magnetic Griffiths phase formation in the magnetic and thermodynamic properties of this system for the same range of $x$, we measure a temperature independent resistivity below 0.5 K indicating Fermi liquid-like transport. We also observe no indication of quantum corrections to the conductivity despite the small values of the product of the Fermi wave vector and the mean-free-path, $1.5 \le k_F\ell \le 15$, over the range of $x$ investigated. This implies a large inelastic scattering rate such that the necessary condition for the observation of quantum contributions to the carrier transport, quantum coherence over times much longer than the elastic scattering time, is not met in our samples. Above 0.5 K we observe a temperature and magnetic field dependent resistivity that closely resembles a Kondo anomaly for $x$ less than that required to form a long range magnetic state, $x_c$. For $x>x_c$, the resistivity and magnetoresistance resemble that of a spin glass with a reduction of the resistivity by as much as 35% in 5 T fields. We also observe an enhancement of the residual resistivity ratio by almost a factor of 2 for samples with $x\sim x_c$ indicating temperature dependent scattering mechanisms beyond simple carrier-phonon scattering. We speculate that this enhancement is due to charge carrier scattering from magnetic fluctuations which contribute to the resistivity over a wide temperature range.

cond-mat.str-el

Magnetic and thermodynamic properties of cobalt doped iron pyrite: Griffiths Phase in a magnetic semiconductor

Doping of the band insulator FeS$_2$ with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the $0\le x\le 0.085$ range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small number of our samples. All of these quantities show systematic variation with $x$ including a paramagnetic to disordered ferromagnetic transition at $x=0.007\pm 0.002$. A detailed analysis of the changes with temperature and magnetic field reveal small power law dependencies at low temperatures for samples near the critical concentration for magnetism, and just above the Curie temperature at higher $x$. In addition, the magnetic susceptibility and specific heat are non-analytic around H=0 displaying an extraordinarily sharp field dependence in this same temperature range. We interpret this behavior as due to the formation of Griffiths phases that result from the quenched disorder inherent in a doped semiconductor.

cond-mat.str-el

Discovery of Griffiths phase in itinerant magnetic semiconductor Fe_{1-x}Co_xS_2

Critical points that can be suppressed to zero temperature are interesting because quantum fluctuations have been shown to dramatically alter electron gas properties. Here, the metal formed by Co doping the paramagnetic insulator FeS$_2$, Fe$_{1-x}$Co$_x$S$_2$, is demonstrated to order ferromagnetically at $x>x_c=0.01\pm0.005$ where we observe unusual transport, magnetic, and thermodynamic properties. We show that this magnetic semiconductor undergoes a percolative magnetic transition with distinct similarities to the Griffiths phase, including singular behavior at $x_c$ and zero temperature.

cond-mat.mtrl-sci

Low Temperature Susceptibility of the Noncentrosymmetric Superconductor CePt_3Si

We report ac susceptibility measurements of polycrystalline CePt_3Si down to 60 mK and in applied fields up to 9 T. In zero field, a full Meissner state emerges at temperatures T/Tc < 0.3, where Tc=0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field Bc2 ~ 4-5 T, the low temperature susceptibility, χ', is quite fragile to applied field, with χ' diminishing rapidly in fields of a few kG. Interestingly, the field dependence of χ' is well described by the power law, 4πχ'=(B/B_c)^{1/2}, where Bc is the field at which the onset of resistance is observed in transport measurements.

cond-mat.supr-con

The Effect of Disorder on a Quantum Phase Transition

The conductivity and magnetization of Fe1-xCoxS2 were measured to investigate quantum critical behavior in disordered itinerant magnets. Small x (<0.001) is required to convert insulating iron pyrite into a metal, followed by a paramagnetic-to-ferromagnetic metal transition at x = 0.032+/-0.004. Singular contributions are discovered that are distinct from those at either metal-insulator or magnetic transitions. Our data reveal that disorder and low carrier density associated with proximity to a metal-insulator transition fundamentally modifies the critical behavior of the magnetic transition.

cond-mat.str-el

Superconducting Properties of MgCNi3 Films

We report the magnetotransport properties of thin polycrystalline films of the recently discovered non-oxide perovskite superconductor MgCNi3. CNi3 precursor films were deposited onto sapphire substrates and subsequently exposed to Mg vapor at 700 C. We report transition temperatures (Tc) and critical field values (Hc2) of MgCNi3 films ranging in thickness from 7.5 nm to 100 nm. Films thicker than ~40 nm have a Tc ~ 8 K, and an upper critical field Hc2 ~ 14 T, which are both comparable to that of polycrystalline powders. Hall measurements in the normal state give a carrier density, n =-4.2 x 10^22 cm^-3, that is approximately 4 times that reported for bulk samples.

cond-mat.supr-con

Structure and Superconducting Properties of "BeB_2"

We present the crystal structure and low temperature electronic transport properties of the intermetallic commonly known as BeB_2. In contrast to the much simpler AlB_2-type structure of the 39K superconductor MgB_2, BeB_2 forms a complex structure type that is nearly unique in nature. The structure has 110.5 atoms per unit cell and a stoichiometry BeB_{2.75}. Polycrystalline Be(^{10.8}B)_{2.75} is superconducting below T_c=0.72K with a critical magnetic field H_{c2}=0.175T. Isotopically pure ^{10.0}B samples of have an enhanced$T_c=0.79K, consistent with a BCS isotope effect. Hall effect measurements suggest that the material is intrinsically compensated.

cond-mat.supr-con