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arXiv · 1302.3907

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Zelei Guo·Rui Dong·Partha Sarathi Chakraborty·Nelson Lourenco·James Palmer·Yike Hu·Ming Ruan·John Hankinson·Jan Kunc·John D. Cressler·Claire Berger·Walt A. de Heer
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Abstract

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

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Zelei Guo, Rui Dong, Partha Sarathi Chakraborty, Nelson Lourenco, James Palmer, Yike Hu, Ming Ruan, John Hankinson, Jan Kunc, John D. Cressler, Claire Berger, Walt A. de Heer. 2013-02-15. Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors. https://doi.org/10.1021/nl303587r

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