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arXiv · 1302.3942

Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

D. N. Nath·P. S. Park·Z. C. Yang·S. Rajan
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Abstract

In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing that non-random or digital AlGaN alloys and polarization-engineered binary GaN barriers can eliminate percolation transport and reduce leakage significantly. The understanding of vertical transport and methods for effective control proposed here will greatly impact III-nitride unipolar vertical devices.

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D. N. Nath, P. S. Park, Z. C. Yang, S. Rajan. 2013-02-16. Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures. https://doi.org/10.1063/1.4813309

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