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arXiv · 1303.1203

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Thibault J. -Y. Derrien·Tatiana E. Itina·Rémi Torres·Thierry Sarnet·Marc Sentis
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Abstract

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

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Thibault J. -Y. Derrien, Tatiana E. Itina, Rémi Torres, Thierry Sarnet, Marc Sentis. 2013-03-05. Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon. https://doi.org/10.1063/1.4818433

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