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Thierry Sarnet

Publications and source records attributed to Thierry Sarnet.

3 recordsLinked to original sources

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

cond-mat.mtrl-sci

Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interaction

We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i) interference of the laser irradiation with an electromagnetic surface wave propagating on a silicon sample; (ii) free carrier formation and laser energy absorption; (iii) energy relaxation and electron-phonon coupling. We perform numerical calculations taking into account the interference of a surface wave with laser; and present the obtained simulation results in order to explain formation mechanisms of the experimentally observed patterns.

physics.plasm-ph

Formation of femtosecond laser induced surface structures on silicon : insights from numerical modeling and single pulse experiments

Laser induced periodic surface structures (LIPSS) are formed by multiple irradiation of femtosecond laser on a silicon target. In this paper, we focus and discuss the surface plasmon polariton mechanism by an analysis of transient phase-matching conditions in Si on the basis of a single pulse experiment and numerical simulations. Two regimes of ripple formation mechanisms at low number of shots are identified and detailed. Correlation of numerical and experimental results is good.

physics.comp-ph