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arXiv · 1303.3900

A silicon electromechanical photodetector

Siddharth Tallur·Sunil A. Bhave
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Abstract

Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

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Siddharth Tallur, Sunil A. Bhave. 2013-03-15. A silicon electromechanical photodetector. https://doi.org/10.1021/nl400980u

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