arXiv subjects

Sunil A. Bhave

Publications and source records attributed to Sunil A. Bhave.

At least 19 recordsLinked to original sources

arXiv2025

Mechanical Sensors for Ultraheavy Dark Matter Searches via Long-range Forces

Dark matter candidates with masses around the Planck-scale are theoretically well-motivated, and it has been suggested that it might be possible to search for dark matter solely via gravitational interactions in this mass range. In this work, we explore the pathway towards searching for dark matter candidates with masses around the Planck-scale using mechanical sensors while considering realistic experimental constraints, and develop analysis techniques needed to conduct such searches. These dark matter particles are expected to leave tracks as their signature in mechanical sensor arrays, and we show that we can effectively search for such tracks using statistical approaches to track-finding. We analyze a range of possible experimental setups and compute sensitivity projections for searches for ultraheavy dark matter coupling to the Standard Model via long-range forces. We find that while a search for Planck-scale dark matter purely via gravitational couplings would be exceedingly difficult, requiring $\sim 80\,\mathrm{dB}$ of quantum noise reduction with a $100^3$ array of devices, there is a wide range of currently unexplored dark matter candidates which can be searched for with already existing or near-term experimental platforms.

hep-ph↗

arXiv2025

Spinwave Bandpass Filters for 6G Communication

Spinwave filters using single-crystal yttrium iron garnet are an attractive technology for integration in frequency adjustable or tunable communication systems. However, existing SW devices do not have sufficient bandwidth for future 5G and 6G communication systems, are too large, or have strong spurious passbands creating unintentional cross-channel interference. Leveraging modern micromachining fabrication methods capable of wafer-scale production, we report a SW ladder filter architecture requiring only a single external magnetic bias. The filters demonstrate loss as low as 2.54 dB, bandwidths up to 663 MHz, center frequency tuning over multiple octaves from 7.08-21.6 GHz, and high linearity with an input referred third-order intercept point over 11 dBm in the passband. The filter's operation is also experimentally demonstrated in a frequency tunable radio system.

physics.app-ph↗

arXiv2025

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Frequency-agile lasers operating in the ultraviolet-to-blue spectral range (360-480 nm) are critical enablers for a wide range of technologies, including free-space and underwater optical communications, optical atomic clocks, and Rydberg-atom-based quantum computing platforms. Integrated photonic lasers offer a compelling platform for these applications by combining low-noise performance with fast frequency tuning in a compact, robust form factor through monolithic integration. However, realizing such lasers in the blue spectral range remains challenging due to limitations in current semiconductor materials and photonic integration techniques. Here, we report the first demonstration of a photonic integrated blue laser at around 461 nm, which simultaneously achieves frequency agility and low phase noise. This implementation is based on the hybrid integration of a gallium nitride-based laser diode, which is self-injection locked to a high-Q microresonator fabricated on a low-loss silicon nitride photonic platform with 0.4 dB/cm propagation loss. The laser exhibits a sub-30 kHz linewidth and delivers over 1 mW of optical output power. In addition, aluminum nitride piezoelectric actuators are monolithically integrated onto the photonic circuitry to enable high-speed modulation of the refractive index, and thus tuning the laser frequency. This enables mode-hop-free laser linear frequency chirps with excursions up to 900 MHz at repetition rates up to 1 MHz, with tuning nonlinearity below 2%. We showcase the potential applications of this integrated laser in underwater communication and coherent aerosol sensing experiments.

physics.optics↗

arXiv2025

Cryogenic Performance Evaluation of Commercial SP4T Microelectromechanical Switch for Quantum Computing Applications

Superconducting quantum computers have emerged as a leading platform for next-generation computing, offering exceptional scalability and unprecedented computational speeds. However, scaling these systems to millions of qubits for practical applications poses substantial challenges, particularly due to interconnect bottlenecks. To address this challenge, extensive research has focused on developing cryogenic multiplexers that enable minimal wiring between room-temperature electronics and quantum processors. This paper investigates the viability of commercial microelectromechanical system (MEMS) switches for cryogenic multiplexers in large-scale quantum computing systems. DC and RF characteristics of the MEMS switches are evaluated at cryogenic temperatures (< 10 K) through finite element simulations and experimental measurements. Our results demonstrate that MEMS switches exhibit improved on-resistance, lower operating voltage, and superior RF performance at cryogenic temperatures, with reliable operation over 100 million cycles. Furthermore, stable single-pole four-throw (SP4T) switching and logical operations, including NAND and NOR gates, are demonstrated at cryogenic temperatures, validating their potential for quantum computing. These results underscore the promise of MEMS switches in realizing large-scale quantum computing systems.

quant-ph↗

arXiv2025

MEMS Switch Enabled Spatiotemporally Modulated Isolators

This work reports the simulation, design, and implementation of a compact MEMS switch based spatiotemporally modulated (STM) bandpass filtering isolator to improve self-interference cancellation (SIC) in underwater acoustic communication networks. Conventional ferrite circulators are unavailable in ultrasonic frequency ranges limiting SIC to techniques such as spatial cancellation and adaptive digital cancellation. This study details a sub-megahertz electronic non-magnetic filtering isolator. High power-handling, compact, and reliable MEMS switches enable the periodically time varying filter circuit to be non-reciprocal. A printed circuit board (PCB) implementation shows strong agreement with spectral admittance matrix simulations with a maximum measured isolation of 15.99 dB. In conjunction with digital SIC methods, this isolator can enable in-band full duplex underwater communication, environmental sensing, and imaging.

physics.app-ph↗

arXiv2025

Broadband acousto-optic modulators on Silicon Nitride

Stress-optic modulators are emerging as a necessary building block of photonic integrated circuits tasked with controlling and manipulating classical and quantum optical systems. While photonic platforms such as lithium niobate and silicon on insulator have well developed modulator ecosystems, silicon nitride so far does not. As silicon nitride has favorable optical properties, such as ultra-low-loss and a large optical transparency window, a rich ecosystem of potential photonic integrated circuits are therefore inhibited. Here we demonstrate a traveling wave optically broadband acousto-optic spiral modulator architecture at a wavelength of 1550 nm using 90 nm thick silicon nitride waveguides and demonstrate their use in an optomechanical sensing system. The spiral weaves the light repeatedly through the acoustic field up to 38 times, factoring in the time evolution of the acoustic field during the light's transit through spirals up to 26 cm in length. These modulators avoid heterogeneous integration, release processes, complicated fabrication procedures, and modifications of the commercial foundry fabricated photonic layer stack by exploiting ultra-low-loss waveguides to enable long phonon-photon interaction lengths required for efficient modulation. The design allows for thick top oxide cladding of 4 $μ$m such that the low loss optical properties of thin silicon nitride can be preserved, ultimately achieving a $V_π$ of 8.98 V at 704 MHz with 1.13 dB of insertion loss. Our modulators are the first optically broadband high frequency acousto-optic modulators on thin silicon nitride, and the novel architecture is accessible to any low loss photonic platform. We demonstrate an immediate use case for these devices in a high-Q optomechanical sensing system.

physics.optics↗

arXiv2024

Monolithic piezoelectrically tunable hybrid integrated laser with sub-fiber laser coherence

Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics, specifically the development of ultra-low loss silicon nitride (Si$_3$N$_4$) platform, have allowed attaining performance that exceeds conventional legacy laser systems, including the phase noise of fiber lasers. This platform can moreover be combined with monolithic integration of piezoelectrical materials, enabling frequency agile low noise lasers. However, this approach has to date not surpassed the trade-off between ultra-low frequency noise and frequency agility. Here we overcome this challenge and demonstrate a fully integrated laser based on the Si$_3$N$_4$ platform with frequency noise lower than that of a fiber laser, while maintaining the capability for high-speed modulation of the laser frequency. The laser achieves an output power of 30 mW with an integrated linewidth of 4.3 kHz and an intrinsic linewidth of 3 Hz, demonstrating phase noise performance that is on par with or lower than commercial fiber lasers. Frequency agility is accomplished via a monolithically integrated piezoelectric aluminum nitride (AlN) micro-electro-mechanical system (MEMS) actuator, which enables a flat frequency actuation bandwidth extending up to 400 kHz. This combination of ultra-low noise and frequency agility is a useful feature enabling tight laser locking for frequency metrology, fiber sensing, and coherent sensing applications. Our results demonstrate the ability of 'next generation' integrated photonic circuits (beyond silicon) to exceed the performance of legacy laser systems in terms of coherence and frequency actuation.

physics.optics↗

arXiv2024

High-performance magnetostatic wave resonators through deep anisotropic etching of GGG substrates

Microscale resonators are fundamental and necessary building blocks for modern radio communication filters for mobile devices. The resonator's Q factor ($Q$) determines the insertion loss while coupling ($K_t^2$) governs the fractional bandwidth. The product $k_t^2 \times Q$ is widely recognized as the definitive figure of merit for microresonators. Magnetostatic wave resonators based on Yttrium Iron Garnet (YIG) are a promising technology platform for future communication filters. They have shown considerably better performance in terms of $Q$ when compared to the commercially successful acoustic resonators in the $>$7 GHz range. However, the coupling coefficients of these resonators have been limited to $<$3 %, primarily due to the restricted design space imposed by microfabrication challenges related to the patterning of gadolinium gallium garnet (GGG), the substrate material used for growing single crystal YIG. This paper reports novel resonator designs enabled by breakthrough bulk micromachining technology for anisotropic etching of GGG, leading to coupling >8 % in the 6-20 GHz frequency range. We use the same technology platform to show resonant enhancement of effective coupling, reaching up to 23 \% at 10.5 GHz. The frequency of resonant coupling can be tuned by design during the fabrication process. The resonant coupling results in an unprecedented $k_t^2 \times Q$ figure of merit of 191 at 10.5 GHz and 222 at 14.7 GHz. The technology platform presented in this paper supports both tunable filter architecture and switched filter banks that are currently being used in consumer mobile devices.

eess.SY↗

arXiv2024

Giant Real-time Strain-Induced Anisotropy Field Tuning in Suspended Yttrium Iron Garnet Thin Films

Yttrium Iron Garnet based tunable magnetostatic wave and spin wave devices are poised to revolutionize the fields of Magnonics, Spintronics, Microwave devices, and quantum information science. The magnetic bias required for operating and tuning these devices is traditionally achieved through large power-hungry electromagnets, which significantly restraints the integration scalability, energy efficiency and individual resonator addressability. While controlling the magnetism of YIG mediated through its magnetostrictive/magnetoelastic interaction would address this constraint and enable novel strain/stress coupled magnetostatic wave (MSW) and spin wave (SW) devices, effective real-time strain-induced magnetism change in YIG remains elusive due to its weak magnetoelastic coupling efficiency and substrate clamping effect. We demonstrate a heterogeneous YIG-on-Si MSW resonator with a suspended thin-film device structure, which allows significant straining of YIG to generate giant magnetism change in YIG. By straining the YIG thin-film in real-time up to 1.06%, we show, for the first time, a 1.837 GHz frequency-strain tuning in MSW/SW resonators, which is equivalent to an effective strain-induced magnetocrystalline anisotropy field of 642 Oe. This is significantly higher than the previous state-of-the-art of 0.27 GHz of strain tuning in YIG. The unprecedented strain tunability of these YIG resonators paves the way for novel energy-efficient integrated on-chip solutions for tunable microwave, photonic, magnonic, and spintronic devices.

physics.app-ph↗

arXiv2024

A Distributed Magnetostatic Resonator

This work reports the design, fabrication, and characterization of coupling-enhanced magnetostatic forward volume wave resonators with significant spur suppression. The fabrication is based on surface micro-machining of yttrium iron garnet (YIG) film on a gadolinium gallium garnet (GGG) substrate with thick gold transducers. A distributed resonator is used to excite forward volume waves in YIG to realize a frequency dependent coupling boost. Fabricated devices at 18 GHz and 7 GHz show coupling coefficients as high as 13$\%$ and quality factors above 1000. Higher-order magnetostatic mode suppression is experimentally demonstrated through a combination of transducer and YIG geometry design. An edge-coupling filter topology is proposed and simulated which utilizes this novel distributed magnetostatic resonator.

physics.app-ph↗

arXiv2023

An Edge-Coupled Magnetostatic Bandpass Filter

This paper reports on the design, fabrication, and characterization of an edge-coupled magnetostatic forward volume wave bandpass filter. Using micromachining techniques, the filter is fabricated from a yttrium iron garnet (YIG) film grown on a gadolinium gallium garnet (GGG) substrate with inductive transducers. By adjusting an out-of-plane magnetic field, we demonstrate linear center frequency tuning for a $4^{\text{th}}$-order filter from 4.5 GHz to 10.1 GHz while retaining a fractional bandwidth of 0.3%, an insertion loss of 6.94 dB, and a -35dB rejection. We characterize the filter nonlinearity in the passband and stopband with IIP3 measurements of -4.85 dBm and 25.84 dBm, respectively. When integrated with a tunable magnetic field, this device is an octave tunable narrowband channel-select filter.

physics.app-ph↗

arXiv2023

Bidirectional microwave-optical transduction based on integration of high-overtone bulk acoustic resonators and photonic circuits

Coherent interconversion between microwave and optical frequencies can serve as both classical and quantum interfaces for computing, communication, and sensing. Here, we present a compact microwave-optical transducer based on monolithic integration of piezoelectric actuators atop silicon nitride photonic circuits. Such an actuator directly couples microwave signals to a high-overtone bulk acoustic resonator defined by the suspended silica cladding of the optical waveguide core, which leads to enhanced electromechanical and optomechanical couplings. At room temperature, this triply resonant piezo-optomechanical transducer achieves an off-chip photon number conversion efficiency of -48 dB over a bandwidth of 25 MHz at an input pump power of 21 dBm. The approach is scalable in manufacturing and, unlike existing electro-optic transducers, does not rely on superconducting resonators. As the transduction process is bidirectional, we further demonstrate synthesis of microwave pulses from a purely optical input. Combined with the capability of leveraging multiple acoustic modes for transduction, the present platform offers prospects for building frequency-multiplexed qubit interconnects and for microwave photonics at large.

quant-ph↗

arXiv2023

Stroboscopic X-ray Diffraction Microscopy of Dynamic Strain in Diamond Thin-film Bulk Acoustic Resonators for Quantum Control of Nitrogen Vacancy Centers

Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This mechanism has been previously harnessed for unconventional quantum spin control, spin decoherence protection, and quantum sensing. Bulk-mode acoustic wave devices are also important in the microelectronics industry as microwave filters. A key challenge in both applications is a lack of appropriate operando microscopy tools for quantifying and visualizing gigahertz-frequency dynamic strain. In this work, we directly image acoustic strain within NV center-coupled diamond thin-film bulk acoustic wave resonators using stroboscopic scanning hard X-ray diffraction microscopy at the Advanced Photon Source. The far-field scattering patterns of the nano-focused X-ray diffraction encode strain information entirely through the illuminated thickness of the resonator. These patterns have a real-space spatial variation that is consistent with the bulk strain's expected modal distribution and a momentum-space angular variation from which the strain amplitude can be quantitatively deduced. We also perform optical measurements of strain-driven Rabi precession of the NV center spin ensemble, providing an additional quantitative measurement of the strain amplitude. As a result, we directly measure the NV spin-stress coupling parameter $b = 2.73(2)$ MHz/GPa by correlating these measurements at the same spatial position and applied microwave power. Our results demonstrate a unique technique for directly imaging AC lattice strain in micromechanical structures and provide a direct measurement of a fundamental constant for the NV center defect spin Hamiltonian.

cond-mat.mtrl-sci↗

arXiv2023

Hertz-linewidth and frequency-agile photonic integrated extended-DBR lasers

Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast (Megahertz bandwidth) tuning using monolithically integrated piezoelectrical actuators. While this marks the first time that fiber laser coherence is achieved using photonic integrated circuits, in conjunction with frequency agility that exceeds those of legacy bulk lasers, the approach is presently compounded by the high cost of manufacturing DFB, as required for self-injection locking, as well as the precise control over the laser current and temperature to sustain a low noise locked operation. Reflective semiconductor optical amplifiers (RSOA) provide a cost-effective alternative solution but have not yet achieved similar performance in coherence or frequency agility, as required for frequency modulated continuous wave (FMCW) LiDAR, laser locking in frequency metrology or wavelength modulation spectroscopy for gas sensing. Here, we overcome this challenge and demonstrate an RSOA-based and frequency agile integrated laser tuned with high speed, good linearity, high optical output power, and turn-key operability while maintaining a small footprint. This is achieved using a tunable extended distributed Bragg reflector (E-DBR) in an ultra-low loss 200 nm thin Si3N4 platform with monolithically integrated piezoelectric actuators. We co-integrate the DBR with a compact ultra-low loss spiral resonator to further reduce the intrinsic optical linewidth of the laser to the Hertz level -- on par with the noise of a fiber laser -- via self-injection locking.

physics.optics↗

arXiv2023

Niobate-on-Niobate Resonators with Aluminum Electrodes

In this work, we have successfully engineered and examined suspended laterally vibrating resonators (LVRs) on a lithium niobate thin film on lithium niobate carrier wafer (LN-on-LN) platform, powered by aluminum interdigital transducers (IDTs). Unlike the lithium niobate-on-silicon system, the LN-on-LN platform delivers a stress-neutral lithium niobate thin film exhibiting the quality of bulk single crystal. The creation of these aluminum-IDTs-driven LN-on-LN resonators was achieved utilizing cutting-edge vapor-HF release techniques. Our testing revealed both symmetric (S0) and sheer horizontal (SH0) lateral vibrations in the LVR resonators. The resonators displayed a quality factor (Q) ranging between 500 and 2600, and coupling coefficient $k_{eff}^2$ up to 13.9%. The figure of merit (FOM) $k_{eff}^2 \times Q$ can reach as high as 294. The yield of these devices proved to be impressively reliable. Remarkably, our LN-on-LN devices demonstrated a consistently stable temperature coefficient of frequency (TCF) and good power handling. Given the low thermal conductivity of lithium niobate, our LN-on-LN technology presents promising potential for future applications such as highly sensitive uncooled sensors using monolithic chip integrated resonator arrays.

physics.app-ph↗

arXiv2023

Photonic-electronic integrated circuit-based coherent LiDAR engine

Microelectronic integration is a key enabler for the ubiquitous deployment of devices in large volumes ranging from MEMS and imaging sensors to consumer electronics. Such integration has also been achieved in photonics, where compact optical transceivers for data centers employ co-integrated photonic and electronic components. Chip-scale integration is of particular interest to coherent laser ranging i.e. frequency modulated continuous wave (FMCW LiDAR), a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range and immunity to interference. Full wafer-scale integration of this technology has been compounded by the stringent requirements on the lasers, requiring high optical coherence, low chirp nonlinearity and requiring optical amplifiers. Here, we overcome this challenge and demonstrate a photonic-electronic integrated circuit-based coherent LiDAR engine, that combined all functionalities using fully foundry-compatible wafer scale manufacturing. It is comprised of a micro-electronic based high voltage arbitrary waveform generator, a hybrid photonic circuit based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide optical amplifier - all realized in a wafer scale manufacturing compatible process that comprises III-V semiconductors, SiN silicon nitride photonic integrated circuits as well as 130nm SiGe BiCMOS technology. The source is a turnkey, linearization-free, and can serve as a 'drop-in' solution in any FMCW LiDAR, that can be seamlessly integrated with an existing focal plane and optical phased array LiDAR approaches, constituting a missing step towards a fully chip-scale integrated LiDAR system.

physics.app-ph↗

arXiv2023

An Integrated Photon-Pair Source with Monolithic Piezoelectric Frequency Tunability

This work demonstrates the capabilities of an entangled photon-pair source at telecom wavelengths, based on a photonic integrated Si$_3$N$_4$ microresonator with monolithically integrated piezoelectric frequency tuning. Previously, frequency tuning of photon-pairs generated by microresonators has only been demonstrated using thermal control, however these have limited actuation bandwidth, and are not compatible with cryogenic environments. Here, the frequency-tunable photon-pair generation capabilities of a Si$_3$N$_4$ microresonator with a monolithically integrated aluminium nitride layer are shown. Fast-frequency locking of the microresonator to an external laser is demonstrated, with a resulting locking bandwidth orders of magnitude larger than reported previously using thermal locking. These abilities will have direct application in future schemes which interface such sources with quantum memories based on e.g. trapped-ion or rare-earth ion schemes.

quant-ph↗

arXiv2022

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resonance and the resonator's own radio-frequency acoustic drive via optically-detected spin acoustic resonance and observe a narrowing of the spin transition to nearly the linewidth of the driving acoustic resonance. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin acoustic resonance is then leveraged to perform stress metrology of the lateral overtone bulk acoustic resonator, showing for the first time the stress distribution inside a bulk acoustic wave resonator. Our work can be applied to the characterization of high quality-factor micro-electro-mechanical systems and has the potential to be extended to a mechanically addressable quantum memory.

physics.app-ph↗