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arXiv · 1304.1781

Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Mario Weiß·Amit Kumar Sahoo·Cristian Raya·Marco Santorelli·Sébastien Fregonese·Cristell Maneux·Thomas Zimmer
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Abstract

This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure.

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Mario Weiß, Amit Kumar Sahoo, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer. 2013-04-05. Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs. https://arxiv.org/abs/1304.1781

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