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arXiv · 1304.2236

Doping Mechanisms in Graphene-MoS2 Hybrids

B. Sachs·L. Britnell·T. O. Wehling·A. Eckmann·R. Jalil·B. D. Belle·A. I. Lichtenstein·M. I. Katsnelson·K. S. Novoselov
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Abstract

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.

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B. Sachs, L. Britnell, T. O. Wehling, A. Eckmann, R. Jalil, B. D. Belle, A. I. Lichtenstein, M. I. Katsnelson, K. S. Novoselov. 2013-12-20. Doping Mechanisms in Graphene-MoS2 Hybrids. https://doi.org/10.1063/1.4852615

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