arXiv subjects

R. Jalil

Publications and source records attributed to R. Jalil.

17 recordsLinked to original sources

arXiv2014

Landau level spectroscopy of electron-electron interactions in graphene

We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of non-interacting massless Dirac electrons, but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter Landau level excitations in graphene are sensitive to electron-electron interactions due to the non-applicability of the Kohn theorem in this system, with a clearly non-parabolic dispersion relation.

cond-mat.mes-hall↗

arXiv2014

Graphene-protected copper and silver plasmonics

Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal compounds to choose from. Unfortunately, most of them either exhibit a strong damping of surface plasmons or easily oxidize and corrode. To this end, there has been continuous search for alternative plasmonic materials that are, unlike gold, the current metal of choice in plasmonics, compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonics characteristics surpassing those of gold films. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate a wide use of graphene-protected plasmonics.

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arXiv2014

Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices

Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy to probe directly the density of states (DoS) and energy gaps in this spectrum. Without a magnetic field, replica spectra are seen as pronounced DoS minima surrounded by van Hove singularities. The Hofstadter butterfly shows up as recurring Landau fan diagrams in high fields. Electron-electron interactions add another twist to the self-similar behaviour. We observe suppression of quantum Hall ferromagnetism, a reverse Stoner transition at commensurable fluxes and additional ferromagnetism within replica spectra. The strength and variety of the interaction effects indicate a large playground to study many-body physics in fractal Dirac systems.

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arXiv2014

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

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arXiv2014

Singular-phase nanooptics: towards label-free single molecule detection

Non-trivial topology of phase is crucial for many important physics phenomena such as, for example, the Aharonov-Bohm effect 1 and the Berry phase 2. Light phase allows one to create "twisted" photons 3, 4 , vortex knots 5, dislocations 6 which has led to an emerging field of singular optics relying on abrupt phase changes 7. Here we demonstrate the feasibility of singular visible-light nanooptics which exploits the benefits of both plasmonic field enhancement and non-trivial topology of light phase. We show that properly designed plasmonic nanomaterials exhibit topologically protected singular phase behaviour which can be employed to radically improve sensitivity of detectors based on plasmon resonances. By using reversible hydrogenation of graphene 8 and a streptavidin-biotin test 9, we demonstrate areal mass sensitivity at a level of femto-grams per mm2 and detection of individual biomolecules, respectively. Our proof-of-concept results offer a way towards simple and scalable single-molecular label-free biosensing technologies.

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arXiv2013

Doping Mechanisms in Graphene-MoS2 Hybrids

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.

cond-mat.mes-hall↗

arXiv2013

Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene

The next-nearest neighbor hopping term t' determines a magnitude and, hence, importance of several phenomena in graphene, which include self-doping due to broken bonds and the Klein tunneling that in the presence of t' is no longer perfect. Theoretical estimates for t' vary widely whereas a few existing measurements by using polarization resolved magneto-spectroscopy have found surprisingly large t', close or even exceeding highest theoretical values. Here we report dedicated measurements of the density of states in graphene by using high-quality capacitance devices. The density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy. This behavior yields t' approx -0.30 eV +-15%, in agreement with the high end of theory estimates. We discuss the role of electron-electron interactions in determining t' and overview phenomena which can be influenced by such a large value of t'.

cond-mat.mtrl-sci↗

arXiv2013

Cloning of Dirac fermions in graphene superlattices

Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.

cond-mat.mes-hall↗

arXiv2013

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

cond-mat.mes-hall↗

arXiv2012

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.

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arXiv2011

Field-effect tunneling transistor based on vertical graphene heterostructures

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

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arXiv2011

Tunable metal-insulator transition in double-layer graphene heterostructures

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a minimum metallic conductivity at the neutrality point, and its resistivity diverges at low temperatures. This divergence can be suppressed by magnetic field or by reducing the carrier density in the adjacent layer. We believe that the observed localization is intrinsic for neutral graphene with generic disorder if metallic electron-hole puddles are screened out.

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arXiv2011

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

cond-mat.mtrl-sci↗

arXiv2010

Fluorographene: Two Dimensional Counterpart of Teflon

We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting Young's modulus of 100 N/m and sustaining strains of 15%. Fluorographene is inert and stable up to 400C even in air, similar to Teflon.

cond-mat.mtrl-sci↗

arXiv2010

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting an integer-step increase in the Raman intensity and optical contrast.

cond-mat.mes-hall↗

arXiv2010

Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite

Graphene is one of the stiffest known materials, with a Young's modulus of 1 TPa, making it an ideal candidate for use as a reinforcement in high-performance composites. However, being a one-atom thick crystalline material, graphene poses several fundamental questions: (1) can decades of research on carbon-based composites be applied to such an ultimately-thin crystalline material? (2) is continuum mechanics used traditionally with composites still valid at the atomic level? (3) how does the matrix interact with the graphene crystals and what kind of theoretical description is appropriate? We have demonstrated unambiguously that stress transfer takes place from the polymer matrix to monolayer graphene, showing that the graphene acts as a reinforcing phase. We have also modeled the behavior using shear-lag theory, showing that graphene monolayer nanocomposites can be analyzed using continuum mechanics. Additionally, we have been able to monitor stress transfer efficiency and breakdown of the graphene/polymer interface.

cond-mat.mtrl-sci↗

arXiv2008

Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation

Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interest, in particular as a new kind of matter, in which electron transport is governed by a Dirac-like wave equation, and as a model system for studying electronic and phonon properties of other, more complex, graphitic materials[1-4]. Here, we uncover the constitutive relation of graphene and probe new physics of its optical phonons, by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E2g optical mode splits in two components, one polarized along the strain and the other perpendicular to it. This leads to the splitting of the G peak into two bands, which we call G+ and G-, by analogy with the effect of curvature on the nanotube G peak[5-7]. Both peaks red shift with increasing strain, and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The singly degenerate 2D and 2D' bands also red shift, but do not split for small strains. We study the Gruneisen parameters for the phonons responsible for the G, D and D' peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance[8, 9]

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