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arXiv · 1306.5292

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Fan Yang·Chunfeng Zhang·Chentian Shi·Min Joo Park·Joon Seop Kwak·Sukkoo Jung·Yoon-Ho Choi·Xuewei Wu·Xiaoyong Wang·Min Xiao
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Abstract

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes.

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Fan Yang, Chunfeng Zhang, Chentian Shi, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xuewei Wu, Xiaoyong Wang, Min Xiao. 2013-06-22. Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells. https://doi.org/10.1063/1.4821454

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