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arXiv · 1307.0249

Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

Yuri M. Brovman·Joshua P. Small·Yongjie Hu·Ying Fang·Charles M. Lieber·Philip Kim
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Abstract

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 μ$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires.

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Yuri M. Brovman, Joshua P. Small, Yongjie Hu, Ying Fang, Charles M. Lieber, Philip Kim. 2013-06-30. Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire. https://arxiv.org/abs/1307.0249

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