arXiv subjects

Yongjie Hu

Publications and source records attributed to Yongjie Hu.

8 recordsLinked to original sources

arXiv2021

Ab initio determination of ultrahigh thermal conductivity in ternary compounds

Discovering new materials with ultrahigh thermal conductivity has been a critical research frontier and driven by many important technological applications ranging from thermal management to energy science. Here we have rigorously investigated the fundamental lattice vibrational spectra in ternary compounds and determined the thermal conductivity using a predictive ab initio approach. Phonon transport in B-X-C (X = N, P, As) groups is systematically quantified with different crystal structures and high-order anharmonicity involving a four-phonon process. Our calculation found an ultrahigh room-temperature thermal conductivity through strong carbon-carbon bonding up to 2100 W/mK beyond most common materials and the recently discovered boron arsenide. This study provides fundamental insight into the atomistic design of thermal conductivity and opens up opportunities in new materials searching towards complicated compound structures. DOI: 10.1103/PhysRevB.103.L041203

cond-mat.mtrl-sci↗

arXiv2019

Basic Physical Properties of Cubic Boron Arsenide

Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity of 1300 W/mK. However, many fundamental properties of BAs remain unexplored experimentally. Here, for the first time, we report the systematic experimental measurements of important physical properties of BAs, including the bandgap, optical refractive index, stiffness, elastic modulus, shear modulus, Poisson ratio, thermal expansion coefficient, and heat capacity. In particular, light absorption and Fabry Perot interference were used to measure an optical bandgap of 1.82 eV and a refractive index of 3.29 (657 nm) at room temperature. A pico-ultrasonic method, based on ultrafast optical pump probe spectroscopy, was used to measure a high elastic modulus of 326 GPa, which is twice that of silicon. Furthermore, temperature dependent X-ray diffraction was used to measure a linear thermal expansion coefficient of 3.85x10^-6 per K; this value is very close to prototype semiconductors such as GaN, which underscores the promise of BAs for cooling high power and high frequency electronics. We also performed ab initio theory calculations and observed good agreement between the experimental and theoretical results. Importantly, this work aims to build a database (Table I) for the basic physical properties of BAs with the expectation that this semiconductor will inspire broad research and applications in electronics, photonics, and mechanics.

cond-mat.mtrl-sci↗

arXiv2019

Role of higher-order phonon scattering in the zone-center optical phonon linewidth and the Lorenz oscillator model

Zone-center optical phonon linewidth is a key parameter for infrared and Raman spectra as well as the Lorenz oscillator model. While three-phonon scattering was often assumed to be the leading contribution, in this work we find, surprisingly, that higher-order phonon scattering universally plays a significant or even dominant role over three-phonon scattering at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and $α$-quartz. This is enabled by the large fourphonon scattering phase space of zone-center optical phonons, and distinct from heat conduction where at room temperature four-phonon scattering is still secondary to three-phonon scattering. Moreover, our results imply that five-phonon and even higher-order scattering may be significant for some large band-gap materials, e.g., BAs. Our predicted infrared optical properties through the Lorenz oscillator model, after including four-phonon scattering, show much better agreement with experimental measurements than those three-phonon based predictions. This work will raise broad interest of studying high-order scattering in various areas beyond heat conduction.

cond-mat.mtrl-sci↗

arXiv2018

Anisotropic thermal conductivity measurement using a new Asymmetric-Beam Time-Domain Thermoreflectance (AB-TDTR) method

Anisotropic thermal properties are of both fundamental and practical interests, but remain challenging to characterize using conventional methods. In this work, a new metrology based on asymmetric beam time-domain thermoreflectance (AB-TDTR) is developed to measure three-dimensional anisotropic thermal transport by extending the conventional TDTR technique. Using an elliptical laser beam with controlled elliptical ratio and spot size, the experimental signals can be exploited to be dominantly sensitive to measure thermal conductivity along the cross-plane or any specific in-plane directions. An analytic solution for a multi-layer system is derived for the AB-TDTR signal in response to the periodical pulse, elliptical laser beam, and heating geometry, to extract the anisotropic thermal conductivity from experimental measurement. Examples with experimental data are given for various materials with in-plane thermal conductivity from 5 W/mK to 2000W/mK, including isotropic materials (silicon, boron phosphide, boron nitride), transversely isotropic materials (graphite, quartz, sapphire) and transversely anisotropic materials (black phosphorus). Furthermore, a detailed sensitivity analysis is conducted to guide the optimal setting of experimental configurations for different materials. The developed AB-TDTR metrology provides a new approach to accurately measure anisotropic thermal phenomena for rational materials design and thermal applications.

physics.ins-det↗

arXiv2017

No energy transport without discord

We show that without quantum correlations, energy cannot flow. The result follows from a simple theorem that shows that systems whose dynamics do not generate quantum discord are effectively non-interacting. We show that the rate of heat transfer between two quantum systems at different temperatures is directly proportional to the instantaneous rate of increase of diagonal/energetic discord between the systems. Consequently, nanoscale heat transfer experiments can be used to measure discord directly. We report the results of a measurement of the increase in discord due to nanoscale heat flow across an aluminum-sapphire interface and find it to be $4.28 \times 10^{24}$ ${\rm bits}\,{\rm m^{-2}}\,{\rm K^{-1}}\,{\rm s^{-1}}$.

quant-ph↗

arXiv2013

Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 μ$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires.

cond-mat.mes-hall↗

arXiv2011

Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

cond-mat.mes-hall↗

arXiv2007

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.

cond-mat.mes-hall↗