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arXiv · 1307.1555

Highly efficient spin transport in epitaxial graphene on SiC

Bruno Dlubak·Marie-Blandine Martin·Cyrile Deranlot·Bernard Servet·Stéphane Xavier·Richard Mattana·Mike Sprinkle·Claire Berger·Walt A. De Heer·Frédéric Petroff·Abdelmadjid Anane·Pierre Seneor·Albert Fert
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Abstract

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

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Bruno Dlubak, Marie-Blandine Martin, Cyrile Deranlot, Bernard Servet, Stéphane Xavier, Richard Mattana, Mike Sprinkle, Claire Berger, Walt A. De Heer, Frédéric Petroff, Abdelmadjid Anane, Pierre Seneor, Albert Fert. 2013-07-05. Highly efficient spin transport in epitaxial graphene on SiC. https://doi.org/10.1038/nphys2331

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