Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

N. Vernier; J. P. Adam; S. Eimer; G. Agnus; T. Devolder; T. Hauet; B. Ockert; D. Ravelosona

doi:10.1063/1.4869482

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arXiv · 1307.6479

Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

N. Vernier·J. P. Adam·S. Eimer·G. Agnus·T. Devolder·T. Hauet·B. Ockert·D. Ravelosona

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Abstract

We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage entities.

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N. Vernier, J. P. Adam, S. Eimer, G. Agnus, T. Devolder, T. Hauet, B. Ockert, D. Ravelosona. 2013-07-24. Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy. https://doi.org/10.1063/1.4869482

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