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arXiv · 1307.7643

Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances

Yuchen Du·Han Liu·Adam T. Neal·Mengwei Si·Peide D. Ye
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Abstract

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors, and its potential applications in layer-structured semiconducting 2D crystals.

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Yuchen Du, Han Liu, Adam T. Neal, Mengwei Si, Peide D. Ye. 2013-07-29. Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances. https://doi.org/10.1109/led.2013.2277311

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