Dependence of spin torque diode voltage on applied field direction

Tomohiro Taniguchi; Hiroshi Imamura

doi:10.1063/1.4817281

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arXiv · 1308.1170

Dependence of spin torque diode voltage on applied field direction

Tomohiro Taniguchi·Hiroshi Imamura

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Abstract

The optimum condition of an applied field direction to maximize spin torque diode voltage was theoretically derived for a magnetic tunnel junction with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer. We found that the diode voltage for a relatively small applied field is maximized when the projection of the applied field to the film-plane is parallel or anti-parallel to the magnetization of the pinned layer. However, by increasing the applied field magnitude, the optimum applied field direction shifts from the parallel or anti-parallel direction. These analytical predictions were confirmed by numerical simulations.

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Tomohiro Taniguchi, Hiroshi Imamura. 2013-08-06. Dependence of spin torque diode voltage on applied field direction. https://doi.org/10.1063/1.4817281

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