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arXiv · 1308.4286

Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance

Kanika Nadda·M. Jagadesh Kumar
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Abstract

In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n emitter and the p base regions, respectively. Using two-dimensional device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma based bipolar transistor with Schottky collector exhibits a high current gain and a better cut-off frequency compared to its conventional counterpart.

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Kanika Nadda, M. Jagadesh Kumar. 2013-08-20. Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance. https://doi.org/10.1109/ted.2013.2272943

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