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arXiv · 1308.4858

Trap-assisted space charge limited transport in short channel MoS2 transistor

Subhamoy Ghatak·Arindam Ghosh
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Abstract

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.

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Subhamoy Ghatak, Arindam Ghosh. 2013-08-22. Trap-assisted space charge limited transport in short channel MoS2 transistor. https://doi.org/10.1063/1.4821185

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