Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures

Ferney A. Chaves; David Jiménez; Aron W. Cummings; Stephan Roche

doi:10.1063/1.4874181

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arXiv · 1309.0390

Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures

Ferney A. Chaves·David Jiménez·Aron W. Cummings·Stephan Roche

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Abstract

In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.

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Ferney A. Chaves, David Jiménez, Aron W. Cummings, Stephan Roche. 2013-09-02. Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures. https://doi.org/10.1063/1.4874181

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