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arXiv · 1310.3915

Reduced graphene oxide thin films as ultrabarriers for organic electronics

Hisato Yamaguchi·Jimmy Granstrom·Wanyi Nie·Hossein Sojoudi·Takeshi Fujita·Damien Voiry·Mingwei Chen·Gautam Gupta·Aditya D. Mohite·Samuel Graham·Manish Chhowalla
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Abstract

Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop 'ultrabarriers' that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e. must be solution processable, deposited at room temperature and be chemically inert). Here, we report lifetime increase of 1,300 hours for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (~10 nm) films of reduced graphene oxide (rGO). This level of protection against oxygen and water vapor diffusion is substantially better than conventional polymeric barriers such as CytopTM, which degrades after only 350 hours despite being 400 nm thick. Analysis using atomic force microscopy, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 hours. Our results provide new insight for the design of high performance and solution processable transparent 'ultrabarriers' for a wide range of encapsulation applications.

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Hisato Yamaguchi, Jimmy Granstrom, Wanyi Nie, Hossein Sojoudi, Takeshi Fujita, Damien Voiry, Mingwei Chen, Gautam Gupta, Aditya D. Mohite, Samuel Graham, Manish Chhowalla. 2013-10-15. Reduced graphene oxide thin films as ultrabarriers for organic electronics. https://doi.org/10.1002/aenm.201300986

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