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arXiv · 1312.4226

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

Zeyuan Ni·Hongxia Zhong·Xinhe Jiang·Ruge Quhe·Yangyang Wang·Junjie Shi·Jing Lu
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Abstract

Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap at the Dirac point of doped silicene. Doped silicene can reach a band gap up to 0.23 eV while keeping a relatively small effective mass of around 0.1 me, thus having high carrier mobility estimated to be 50000 cm2/Vs. P-type doping and neutral state is realized in silicene by Ir and Pt adsorption, respectively, while n-type doping is done by Cu, Ag, and Au adsorption. Based on the knowledge above, a silicene p-i-n tunneling field effect transistor (TFET) is proposed and simulated by both first-principles and semi-empirical approaches. Silicene TFET shows high performance with an on-off ratio of 10^3, a sub-threshold swing of 90 mV/dec, and an on-state current of 1 mA/{\mu}m. Such an on-state current is even larger than that of most other existing TFETs.

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Zeyuan Ni, Hongxia Zhong, Xinhe Jiang, Ruge Quhe, Yangyang Wang, Junjie Shi, Jing Lu. 2013-12-16. Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors. https://doi.org/10.1039/c4nr00028e

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