arXiv subjects

Hongxia Zhong

Publications and source records attributed to Hongxia Zhong.

14 recordsLinked to original sources

arXiv2022

Quasiparticle band alignment and stacking-independent exciton in MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As)

Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more significant band gaps and different absolute quasiparticle energy but predict the same types of band alignments.

cond-mat.mtrl-sci↗

arXiv2021

Electronic properties and quasi-particle model of monolayer MoSi$_2$N$_4$

By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $\sqrt{q}$-dependent plasmon mode that agrees well with the results of first-principles calculations. Our model can be extended to be suitable for future theoretical and numerical studies of low-energy properties in MoSi$_2$N$_4$ family materials. Furthermore, the study of electronic properties of monolayer MoSi$_2$N$_4$ paves a way for its applications in spintronics and plasmonics.

cond-mat.mtrl-sci↗

arXiv2021

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we reveal a linear relationship between tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X3NA (X2+ = Mg2+, Ca2+, Sr2+; A3- = P3-, As3-, Sb3-, Bi3-), for the first time, we design a promising antiperovskite alloy Mg3NAs0.5Bi0.5 with the quasi-direct band gap of 1.402 eV. Finally, we make a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications.

cond-mat.mtrl-sci↗

arXiv2020

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.

cond-mat.mtrl-sci↗

arXiv2020

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

cond-mat.mes-hall↗

arXiv2019

Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations

A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hoppings between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields.

physics.comp-ph↗

arXiv2018

Electronic and mechanical properties of few-layer borophene

We report first principle calculations of electronic and mechanical properties of few-layer borophene with the inclusion of interlayer van der Waals (vdW) interaction. The anisotropic metallic behaviors are preserved from monolayer to few-layer structures. The energy splitting of bilayer borophene at $Γ$ point near the Fermi level is about 1.7 eV, much larger than the values (0.5--1 eV) of other layered semiconductors, indicating much stronger vdW interactions in metallic layered borophene. In particular, the critical strains are enhanced by increasing the number of layers, leading to much more flexibility than that of monolayer structure. On the one hand, because of the buckled atomic structures, the out-of-plane negative Poisson's ratios are preserved as the layer-number increases. On the other hand, we find that the in-plane negative Poisson's ratios disappear in layered borophene, which is very different from puckered black phosphorus. The negative Poisson's ratio will recover if we enlarge the interlayer distance to 6.3 $\mboxÅ$, indicating that the physical origin behind the change of Poisson's ratios is the strong interlayer vdW interactions in layered borophene.

cond-mat.mtrl-sci↗

arXiv2015

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

cond-mat.mtrl-sci↗

arXiv2015

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

cond-mat.mes-hall↗

arXiv2015

Silicene on Substrates: A Theoretical Perspective

Silicene, as the silicon analog of graphene, has been successfully fabricated by epitaxial growing on various substrates. Similar to free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band, resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The maintenance of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially focusing on the changes of the Dirac cone.

cond-mat.mtrl-sci↗

arXiv2015

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in the two types of contacts and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

cond-mat.mes-hall↗

arXiv2015

Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide

Recently, two-dimensional (2D) materials with strong in-plane anisotropic properties such as black phosphorus have demonstrated great potential for developing new devices that can take advantage of its reduced lattice symmetry with potential applications in electronics, optoelectronics and thermoelectrics. However, the selection of 2D material with strong in-plane anisotropy has so far been very limited and only sporadic studies have been devoted to transition metal dichalcogenides (TMDC) materials with reduced lattice symmetry, which is yet to convey the full picture of their optical and phonon properties, and the anisotropy in their interlayer interactions. Here, we study the anisotropic interlayer interactions in an important TMDC 2D material with reduced in-plane symmetry - atomically thin rhenium diselenide (ReSe2) - by investigating its ultralow frequency interlayer phonon vibration modes, the layer dependent optical bandgap, and the anisotropic photoluminescence (PL) spectra for the first time. The ultralow frequency interlayer Raman spectra combined with the first study of polarization-resolved high frequency Raman spectra in mono- and bi-layer ReSe2 allows deterministic identification of its layer number and crystal orientation. PL measurements show anisotropic optical emission intensity with bandgap increasing from 1.26 eV in the bulk to 1.32 eV in monolayer, consistent with the theoretical results based on first-principle calculations. The study of the layer-number dependence of the Raman modes and the PL spectra reveals the relatively weak van der Waals interaction and 2D quantum confinement in atomically-thin ReSe2.

cond-mat.mes-hall↗

arXiv2014

Graphdiyne-metal contacts and graphdiyne transistors

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial properties of graphdiyne contacting with a series of metals (Al, Ag, Cu, Au, Ir, Pt, Ni, and Pd). Graphdiyne is in an n-type Ohmic or quasi-Ohmic contact with Al, Ag, and Cu, while it is in a Schottky contact with Au (at source/drain interface), Pd, Pt, Ni, and Ir (at source/drain-channel interface), with high Schottky barrier heights of 0.39, 0.21 (n-type), 0.30, 0.41, and 0.45 (p-type) eV, respectively. A graphdiyne field effect transistor (FET) with Al electrodes is simulated by using quantum transport calculations. This device exhibits an on-off ratio up to 104 and a very large on-state current of 1.3 * 104 mA/mm in a 10 nm channel length. Thus, a new prospect is opened up for graphdiyne in high performance nanoscale devices.

cond-mat.mtrl-sci↗

arXiv2013

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap at the Dirac point of doped silicene. Doped silicene can reach a band gap up to 0.23 eV while keeping a relatively small effective mass of around 0.1 me, thus having high carrier mobility estimated to be 50000 cm2/Vs. P-type doping and neutral state is realized in silicene by Ir and Pt adsorption, respectively, while n-type doping is done by Cu, Ag, and Au adsorption. Based on the knowledge above, a silicene p-i-n tunneling field effect transistor (TFET) is proposed and simulated by both first-principles and semi-empirical approaches. Silicene TFET shows high performance with an on-off ratio of 10^3, a sub-threshold swing of 90 mV/dec, and an on-state current of 1 mA/μm. Such an on-state current is even larger than that of most other existing TFETs.

cond-mat.mtrl-sci↗