arXiv · 1312.4647
High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon
Abstract
The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments.
Explore related subjects
Keep this discovery
Arne Laucht, Rachpon Kalra, Juha T. Muhonen, Juan P. Dehollain, Fahd A. Mohiyaddin, Fay Hudson, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello. 2013-12-17. High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon. https://doi.org/10.1063/1.4867905
Cite the original work for its findings. Save a collection to share your selection of sources.