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arXiv · 1401.2795

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

M. Lesik·J. -P. Tetienne·A. Tallaire·J. Achard·V. Mille·A. Gicquel·J. -F. Roch·V. Jacques
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Abstract

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition (CVD) growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ~ 97 % probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

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M. Lesik, J. -P. Tetienne, A. Tallaire, J. Achard, V. Mille, A. Gicquel, J. -F. Roch, V. Jacques. 2014-06-04. Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample. https://doi.org/10.1063/1.4869103

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