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arXiv · 1402.2074

Evolution and defect analysis of vertical graphene nanosheets

Subrata Ghosh·K. Ganesan·Shyamal R. Polaki·T. R. Ravindran·Nanda Gopala Krishna·M. Kamruddin·A. K. Tyagi
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Abstract

We report catalyst-free direct synthesis of vertical graphene nanosheets (VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder-induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO2/Si substrates predominantly consists of both vacancy-like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary-like defects. XPS studies also corroborate Raman analysis in terms of defect density and vacancy-like defects for the VGNs grown on SiO2/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95 to 78 % at 550 nm and the sheet resistance varies from 30 to 2.17 kohms/square depending on growth time.

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Subrata Ghosh, K. Ganesan, Shyamal R. Polaki, T. R. Ravindran, Nanda Gopala Krishna, M. Kamruddin, A. K. Tyagi. 2014-02-10. Evolution and defect analysis of vertical graphene nanosheets. https://doi.org/10.1002/jrs.4530

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