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arXiv · 1402.3129

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Joern Schwandt·Eckhart Fretwurst·Robert Klanner·Ioannis Kopsalis·Jiaguo Zhang
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Abstract

The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on high-ohmic n-type silicon with two crystal orientations and dif- ferent technological parameters, has been studied for doses between 1 kGy and 1 GGy. The extracted values of oxide-charge and surface-current densi- ties have been used in TCAD simulations, and the layout and technological parameters of the AGIPD pixel sensor optimized. It is found that the op- timized layout for high X-ray doses is significantly different from the one for non-irradiated sensors. First sensors and test structures have been de-livered in early 2013. Measurement results for X-ray doses of 0 to 10 MGy and their comparison to simulations are presented. They demonstrate that the optimization has been successful and that the sensors fulfill the required specifications.

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Joern Schwandt, Eckhart Fretwurst, Robert Klanner, Ioannis Kopsalis, Jiaguo Zhang. 2014-02-13. Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser. https://doi.org/10.1109/tns.2014.2304239

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