Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors

Riccardo Di Pietro; Deepak Venkateshvaran; Andreas Klug; Emil J. W. List-Kratochvil; Antonio Facchetti; Henning Sirringhaus; Dieter Neher

doi:10.1063/1.4876057

arXiv · 1402.5241

Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors

Riccardo Di Pietro·Deepak Venkateshvaran·Andreas Klug·Emil J. W. List-Kratochvil·Antonio Facchetti·Henning Sirringhaus·Dieter Neher

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Abstract

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials.

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Riccardo Di Pietro, Deepak Venkateshvaran, Andreas Klug, Emil J. W. List-Kratochvil, Antonio Facchetti, Henning Sirringhaus, Dieter Neher. 2014-02-21. Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors. https://doi.org/10.1063/1.4876057

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