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arXiv · 1402.5598

Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain

Lianfeng Zhao·Zhen Tan·Jing Wang·Jun Xu
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Abstract

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.

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Lianfeng Zhao, Zhen Tan, Jing Wang, Jun Xu. 2014-02-23. Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain. https://arxiv.org/abs/1402.5598

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