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Lianfeng Zhao

Publications and source records attributed to Lianfeng Zhao.

6 recordsLinked to original sources

Accelerating Structure-Property Relationship Discovery with Multimodal Machine Learning and Self-Driving Microscopy

Microscopy combined with local spectroscopy is widely used to correlate nanoscale structure with functional properties in materials, but conventional measurements rely heavily on human-selected sampling locations and predefined targets, limiting dataset diversity and the potential for discovery. Here, we present a framework that integrates autonomous microscopy with a dual-novelty deep kernel learning (DN-DKL) for adaptive data acquisition and a dual variational autoencoder (VAE) for representation learning. DN-DKL actively guides the microscopy toward structurally and spectroscopically novel regions, enabling efficient collection of large spectral datasets. Dual-VAE embeds local structure and spectroscopic responses into a shared latent manifold that serves as a structure-property relationship map. We applied this framework for the investigation of halide perovskite films using conductive atomic force microscopy. The results reveal distinct hysteresis behaviors that are linked to specific nanoscale structural motifs, including grain boundary junction points that show hysteresis under different bias conditions and asymmetric grain boundaries that suppress charge transport. This framework establishes a general strategy that leverages the complementary strengths of self-driving microscopy, machine learning, and human expertise to accelerate scientific discovery in functional materials.

cond-mat.mtrl-sci

In-Situ Growth of Halide Perovskite Single Crystals and Thin Films on Optical Fiber End Facets

Halide perovskites exhibit significant advantages for active optical components such as light emitting diodes, solar cells and photodetectors due to their excellent optoelectronic properties. Their nonlinear optical effects and other characteristics also make them suitable for integration into waveguide components, such as optical fibers, for applications like optical modulation. Although some efforts have been made to integrate perovskite nanomaterials with optical fibers, technological challenges have hindered reliable in-situ preparation methods. Herein, we propose an area-selective wetting strategy for optical fibers, which utilizes hydrophobic sidewalls and hydrophilic end facets to reliably hold small precursor droplets. By introducing a space confinement strategy to suppress the kinetics of solvent evaporation, Methylammonium lead bromide (MAPbBr3) perovskite single crystals were successfully grown in-situ on the fiber end facet. The versatility of this in-situ growth method for single crystals on fiber end facets of various sizes has also been verified. In a separate approach, the controllable in-situ preparation of CsPbBr3 polycrystalline thin films was achieved through vacuum-assisted rapid crystallization. Our strategy provides a controllable platform for the integration of perovskite materials and optical fibers, enabling further development in optical applications.

physics.optics

Roadmap on Perovskite Light-Emitting Diodes

In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to approaching 30% (in 2023) across a wide range of wavelengths. However, several challenges still hinder their commercialization, including the relatively low EQEs of blue/white devices, limited EQEs in large-area devices, poor device stability, as well as the toxicity of the easily accessible lead components and the solvents used in the synthesis and processing of PeLEDs. This roadmap addresses the current and future challenges in PeLEDs across fundamental and applied research areas, by sharing the community's perspectives. This work will provide the field with practical guidelines to advance PeLED development and facilitate more rapid commercialization.

physics.optics

Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.

cond-mat.mtrl-sci

Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by ~24% for the Al2O3/GaSb stacks and ~27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.

cond-mat.mtrl-sci

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, those treated with acidic (NH4)2S solution showed great improvements in frequency dispersion, gate leakage current and interface trap density. These improvements were attributed to the acidic (NH4)2S solution enhancing passivation of the substrates, which was analyzed from the perspective of chemical mechanism and confirmed by X-ray photoelectron spectroscopy and high-resolution cross-sectional transmission electron microscopy.

cond-mat.mtrl-sci