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arXiv · 1402.5755

Experimental realization of a semiconducting full Heusler compound: Fe2TiSi

Markus Meinert·Manuel P. Geisler·Jan Schmalhorst·Ulrich Heinzmann·Elke Arenholz·Walid Hetaba·Michael Stöger-Pollach·Andreas Hütten·Günter Reiss
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Abstract

Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disorder or off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.

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Markus Meinert, Manuel P. Geisler, Jan Schmalhorst, Ulrich Heinzmann, Elke Arenholz, Walid Hetaba, Michael Stöger-Pollach, Andreas Hütten, Günter Reiss. 2014-02-24. Experimental realization of a semiconducting full Heusler compound: Fe2TiSi. https://doi.org/10.1103/physrevb.90.085127

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