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arXiv · 1403.1079

Control of the ionization state of 3 single donor atoms in silicon

Benoit Voisin·Manuel Cobian·Xavier Jehl·Yann-Michel Niquet·Christophe Delerue·Silvano De Franceschi·Marc Sanquer
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Abstract

By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes.

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Benoit Voisin, Manuel Cobian, Xavier Jehl, Yann-Michel Niquet, Christophe Delerue, Silvano De Franceschi, Marc Sanquer. 2014-03-05. Control of the ionization state of 3 single donor atoms in silicon. https://doi.org/10.1103/physrevb.89.161404

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